All MOSFET. GSM8206 Datasheet

 

GSM8206 Datasheet and Replacement


   Type Designator: GSM8206
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: TSOP-6
 

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GSM8206 Datasheet (PDF)

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GSM8206

GSM8206 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m@VGS=-1.8V Super high density cell design for extremely These devices a

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GSM8206

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=37m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m@VGS=1.8V These devices are particularly suited for low Super high density cell design for ext

Datasheet: GSM7412 , GSM7420 , GSM7424S , GSM7472S , GSM7617WS , GSM7619WS , GSM7923WS , GSM8205 , IRFP250N , GSM8411 , GSM8412 , GSM8439 , GSM8451 , GSM8452 , GSM8459 , GSM8471 , GSM8473 .

History: HAT2199WP | AFN3436 | AFN6561 | GT55N06 | OSG60R260DF | ELM3C1260A | HUFA76445P3

Keywords - GSM8206 MOSFET datasheet

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