GSM8206 Datasheet. Specs and Replacement

Type Designator: GSM8206

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: TSOP-6

GSM8206 substitution

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GSM8206 datasheet

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GSM8206

GSM8206 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=-1.8V Super high density cell design for extremely These devices a... See More ⇒

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GSM8206

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM8205, N-Channel enhancement mode 20V/5A,RDS(ON)=29m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=37m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.4A,RDS(ON)=50m @VGS=1.8V These devices are particularly suited for low Super high density cell design for ext... See More ⇒

Detailed specifications: GSM7412, GSM7420, GSM7424S, GSM7472S, GSM7617WS, GSM7619WS, GSM7923WS, GSM8205, IRFB4115, GSM8411, GSM8412, GSM8439, GSM8451, GSM8452, GSM8459, GSM8471, GSM8473

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