All MOSFET. GSM8439 Datasheet

 

GSM8439 Datasheet and Replacement


   Type Designator: GSM8439
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT-223
 

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GSM8439 Datasheet (PDF)

 ..1. Size:876K  globaltech semi
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GSM8439

GSM8439 GSM8439 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/6.0A,RDS(ON)=45m@VGS=4.5V GSM8439, N-Channel enhancement mode 30V/5.5A,RDS(ON)=55m@VGS=2.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.1. Size:1204K  globaltech semi
gsm8471.pdf pdf_icon

GSM8439

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (

 9.2. Size:910K  globaltech semi
gsm8411.pdf pdf_icon

GSM8439

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m@VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m@VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly

 9.3. Size:837K  globaltech semi
gsm8483.pdf pdf_icon

GSM8439

GSM8483 GSM8483 100V P-Channel Enhancement Mode MOSFET Product Description Features -100V/-3.8A,RDS(ON)=260m@VGS=-10V GSM8483, P-Channel enhancement mode -100V/-2.6A,RDS(ON)=290m@VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package de

Datasheet: GSM7472S , GSM7617WS , GSM7619WS , GSM7923WS , GSM8205 , GSM8206 , GSM8411 , GSM8412 , 2SK3878 , GSM8451 , GSM8452 , GSM8459 , GSM8471 , GSM8473 , GSM8483 , GSM8803 , GSM8816 .

History: 2SK2431 | BUK7Y25-80E | HGB025N06S | AP2304AGN | AP70SL380AS | H04N65E | AP9571GP-HF

Keywords - GSM8439 MOSFET datasheet

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