GSM8439 Datasheet. Specs and Replacement

Type Designator: GSM8439  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT-223

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GSM8439 datasheet

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GSM8439

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GSM8439

GSM8471 GSM8471 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (... See More ⇒

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GSM8439

GSM8411 GSM8411 100V N-Channel Enhancement Mode MOSFET Product Description Features 100V/5.8A,RDS(ON)=115m @VGS=10V GSM8411, N-Channel enhancement mode 100V/4.6A,RDS(ON)=125m @VGS=4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. These devices are particularly... See More ⇒

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GSM8439

GSM8483 GSM8483 100V P-Channel Enhancement Mode MOSFET Product Description Features -100V/-3.8A,RDS(ON)=260m @VGS=-10V GSM8483, P-Channel enhancement mode -100V/-2.6A,RDS(ON)=290m @VGS=-4.5V MOSFET, uses Advanced Trench Super high density cell design for extremely Technology to provide excellent RDS(ON), low low RDS (ON) gate charge. SOT-223 package de... See More ⇒

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Detailed specifications: GSM7472S, GSM7617WS, GSM7619WS, GSM7923WS, GSM8205, GSM8206, GSM8411, GSM8412, IRF9540, GSM8451, GSM8452, GSM8459, GSM8471, GSM8473, GSM8483, GSM8803, GSM8816

Keywords - GSM8439 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.