All MOSFET. GSM8989 Datasheet

 

GSM8989 Datasheet and Replacement


   Type Designator: GSM8989
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: SOT-89
 

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GSM8989 Datasheet (PDF)

 ..1. Size:813K  globaltech semi
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GSM8989

GSM8989 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM8989, P-Channel enhancement mode -60V/-3.6A,RDS(ON)=115m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.6A,RDS(ON)=125m@ VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for

 8.1. Size:887K  globaltech semi
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GSM8989

GSM8988 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM8988, N-Channel enhancement mode 100V/4.6A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.6A,RDS(ON)=130m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for lo

 8.2. Size:777K  globaltech semi
 gsm8987w.pdf pdf_icon

GSM8989

GSM8987W 80V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987W, N-Channel enhancement mode 80V/4.6A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench Technology 80V/3.6A,RDS(ON)=85m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

 8.3. Size:449K  globaltech semi
 gsm8987.pdf pdf_icon

GSM8989

GSM8987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM8987, N-Channel enhancement mode 90V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/1.8A,RDS(ON)=320m@ VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low

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Datasheet: GSM8931 , GSM8936 , GSM8943 , GSM8968 , GSM8987 , GSM8987W , GSM8988 , GSM8988W , 4435 , GSM8995 , GSM9407 , GSM9434WS , GSM9435S , GSM9435WS , GSM9498 , GSM9510S , GSM9565S .

History: CJPF02N65 | DMG8880LSS | SQM90142E | CS65N20-30 | C3M0065100K | IPB120N08S4-03 | IXFV110N10P

Keywords - GSM8989 MOSFET datasheet

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