All MOSFET. GSM9435WS Datasheet

 

GSM9435WS Datasheet and Replacement


   Type Designator: GSM9435WS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOP-8P
 

 GSM9435WS substitution

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GSM9435WS Datasheet (PDF)

 ..1. Size:951K  globaltech semi
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GSM9435WS

GSM9435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 7.1. Size:955K  globaltech semi
 gsm9435s.pdf pdf_icon

GSM9435WS

GSM9435S P-Channel Enhancement Mode MOSFET Product Description Features GSM9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 8.1. Size:908K  globaltech semi
 gsm9434ws.pdf pdf_icon

GSM9435WS

GSM9434WS 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)= 42m@VGS= -4.5V OSFET, uses Advanced Trench Technology to -20V/-4.5A,RDS(ON)= 58m@VGS= -2.5V provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)= 72m@VGS= -1.8V Super high density cell design for extremely These

 9.1. Size:807K  globaltech semi
 gsm9498.pdf pdf_icon

GSM9435WS

GSM9498 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9498, N-Channel enhancement mode 100V/5A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/3A,RDS(ON)=145m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

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Datasheet: GSM8987W , GSM8988 , GSM8988W , GSM8989 , GSM8995 , GSM9407 , GSM9434WS , GSM9435S , IRLB4132 , GSM9498 , GSM9510S , GSM9565S , GSM9566W , GSM9575S , GSM9576 , GSM9910 , GSM9971 .

History: 2SJ472-01S | SIHF9520 | SL7N65C | AFN04N60T220FT | TSM1N60LCH | NCE65NF190F | RSR010N10

Keywords - GSM9435WS MOSFET datasheet

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