GSM9987 MOSFET. Datasheet pdf. Equivalent
Type Designator: GSM9987
Marking Code: 9987
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO-252
GSM9987 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GSM9987 Datasheet (PDF)
gsm9987.pdf
GSM9987 GSM9987 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM9987, N-Channel enhancement mode 90V/15A,RDS(ON)= 75m@VGS=10V MOSFET, uses Advanced Trench 90V/12A,RDS(ON)= 85m@VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for extremely gate charge. These devices are particularly low RDS (ON) suit
gsm9990s.pdf
GSM9990S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9990S, N-Channel enhancement mode 60V/40A,RDS(ON)=7.8m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=9.8m@VGS=6V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TO-252-2L
gsm9972s.pdf
GSM9972S 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9972S, N-Channel enhancement mode 60V/35A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/25A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm9971b.pdf
GSM9971B 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971B, N-Channel enhancement mode 60V/18A,RDS(ON)=56m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=62m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm9997.pdf
GSM9997 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9997, N-Channel enhancement mode 100V/8A,RDS(ON)=120m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/6A,RDS(ON)=125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm9995s.pdf
GSM9995S 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9995S, N-Channel enhancement mode 100V/20A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/16A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm9977.pdf
GSM9977 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9977, N-Channel enhancement mode 60V/8A,RDS(ON)=118m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=130m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low T
gsm9971.pdf
60V N-Channel Enhancement Mode MOSFET Product Description Features GSM9971, N-Channel enhancement mode 60V/18A,RDS(ON)= 42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/12A,RDS(ON)= 50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm9910.pdf
GSM9910 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM9910, N-Channel enhancement mode 100V/4A,RDS(ON)=320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4A,RDS(ON)=340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: HUF76619D3 | GWM160-0055X1-SL
History: HUF76619D3 | GWM160-0055X1-SL
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