H5N2901FL-M0 MOSFET. Datasheet pdf. Equivalent
Type Designator: H5N2901FL-M0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 290 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.091 Ohm
Package: TO-220FL
H5N2901FL-M0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H5N2901FL-M0 Datasheet (PDF)
..1. Size:92K renesas
h5n2901fl-m0.pdf
h5n2901fl-m0.pdf
Preliminary Datasheet H5N2901FL-M0 R07DS0996EJ0100290V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.07 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1
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