All MOSFET. H5N2901FL-M0 Datasheet

 

H5N2901FL-M0 Datasheet and Replacement


   Type Designator: H5N2901FL-M0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 290 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.091 Ohm
   Package: TO-220FL
 

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H5N2901FL-M0 Datasheet (PDF)

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H5N2901FL-M0

Preliminary Datasheet H5N2901FL-M0 R07DS0996EJ0100290V - 18A - MOS FET Rev.1.00High Speed Power Switching Jan 08, 2013Features Low on-resistance RDS(on) = 0.07 typ. (at ID = 9 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AF-A(Package name: TO-220FL)D1

Datasheet: GSM9995S , GSM9997 , GSMBSS123 , GSMBSS138 , GSMBSS84 , H5N2001LM , H5N2512FL-M0 , H5N2522FP-E0 , IRFZ24N , H5N3005LM , H5N3007FL-M0 , H5N5004PL-E0-E , H5N5005PL-E0-E , H5N5006LD , H5N5006LM , H5N5016PL-E0-E , H7N0405LD .

History: VBM1405

Keywords - H5N2901FL-M0 MOSFET datasheet

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