H5N2901FL-M0 Datasheet. Specs and Replacement

Type Designator: H5N2901FL-M0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 290 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.091 Ohm

Package: TO-220FL

H5N2901FL-M0 substitution

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H5N2901FL-M0 datasheet

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H5N2901FL-M0

Preliminary Datasheet H5N2901FL-M0 R07DS0996EJ0100 290V - 18A - MOS FET Rev.1.00 High Speed Power Switching Jan 08, 2013 Features Low on-resistance RDS(on) = 0.07 typ. (at ID = 9 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code PRSS0003AF-A (Package name TO-220FL) D 1... See More ⇒

Detailed specifications: GSM9995S, GSM9997, GSMBSS123, GSMBSS138, GSMBSS84, H5N2001LM, H5N2512FL-M0, H5N2522FP-E0, IRFZ24N, H5N3005LM, H5N3007FL-M0, H5N5004PL-E0-E, H5N5005PL-E0-E, H5N5006LD, H5N5006LM, H5N5016PL-E0-E, H7N0405LD

Keywords - H5N2901FL-M0 MOSFET specs

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