INJ0312AC1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: INJ0312AC1
   Marking Code: J9
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 35 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SC-59

INJ0312AC1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

INJ0312AC1 Datasheet (PDF)

..1. Size:241K isahaya
inj0312ac1.pdf

INJ0312AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INJ0312AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.

6.1. Size:115K isahaya
inj0312ap1.pdf