All MOSFET. INJ0312AC1 Datasheet

 

INJ0312AC1 Datasheet and Replacement


   Type Designator: INJ0312AC1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SC-59
 

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INJ0312AC1 Datasheet (PDF)

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INJ0312AC1

INJ0312AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INJ0312AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.

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INJ0312AC1

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INJ0312AC1

Datasheet: INJ0003AU1 , INJ0011AC1 , INJ0011AM1 , INJ0011AU1 , INJ0203AC1 , INJ0203BC1 , INJ0212AP1 , INJ0303AC1 , IRF3205 , INJ0312AP1 , INK0001AC1 , INK0001AM1 , INK0001AU1 , INK0001BC1 , INK0001BM1 , INK0001BU1 , INK0002AC1 .

History: 7788

Keywords - INJ0312AC1 MOSFET datasheet

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