INJ0312AP1 Datasheet and Replacement
Type Designator: INJ0312AP1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SC-62
INJ0312AP1 substitution
INJ0312AP1 Datasheet (PDF)
inj0312ac1.pdf
INJ0312AC1 High Speed Switching Silicon P-channel MOSFETDESCRIPTION OUTLINE DRAWING UNIT INJ0312AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65FEATURE Input impedance is high, and not necessary to consider a drive electric current.
Datasheet: INJ0011AC1 , INJ0011AM1 , INJ0011AU1 , INJ0203AC1 , INJ0203BC1 , INJ0212AP1 , INJ0303AC1 , INJ0312AC1 , IRF740 , INK0001AC1 , INK0001AM1 , INK0001AU1 , INK0001BC1 , INK0001BM1 , INK0001BU1 , INK0002AC1 , INK0002AM1 .
History: 2SK3646-01SJ | 2SK1352 | HM4490 | BUK7Y1R4-40H | AONR26309A | SQJ962EP | SGSP474
Keywords - INJ0312AP1 MOSFET datasheet
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History: 2SK3646-01SJ | 2SK1352 | HM4490 | BUK7Y1R4-40H | AONR26309A | SQJ962EP | SGSP474
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