INJ0312AP1 Specs and Replacement

Type Designator: INJ0312AP1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: SC-62

INJ0312AP1 substitution

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INJ0312AP1 datasheet

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INJ0312AP1

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INJ0312AP1

INJ0312AC1 High Speed Switching Silicon P-channel MOSFET DESCRIPTION OUTLINE DRAWING UNIT INJ0312AC1 is a Silicon P-channel MOSFET. This product is most suitable for use such as portable 2.8 machinery, because of low voltage drive and low on resistance. 0.65 1.5 0.65 FEATURE Input impedance is high, and not necessary to consider a drive electric current. ... See More ⇒

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INJ0312AP1

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Detailed specifications: INJ0011AC1, INJ0011AM1, INJ0011AU1, INJ0203AC1, INJ0203BC1, INJ0212AP1, INJ0303AC1, INJ0312AC1, IRF740, INK0001AC1, INK0001AM1, INK0001AU1, INK0001BC1, INK0001BM1, INK0001BU1, INK0002AC1, INK0002AM1

Keywords - INJ0312AP1 MOSFET specs

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