All MOSFET. INK0103AM1 Datasheet

 

INK0103AM1 MOSFET. Datasheet pdf. Equivalent

Type Designator: INK0103AM1

Marking Code: KG

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 0.7 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 16 pF

Maximum Drain-Source On-State Resistance (Rds): 0.33 Ohm

Package: SC-70

INK0103AM1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

INK0103AM1 Datasheet (PDF)

1.1. ink0103ac1 ink0103am1 ink0103au1.pdf Size:150K _update-mosfet

INK0103AM1
INK0103AM1



4.1. ink0102ac1 ink0102am1 ink0102au1.pdf Size:153K _update-mosfet

INK0103AM1
INK0103AM1



 5.1. ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf Size:205K _update-mosfet

INK0103AM1
INK0103AM1

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit:mm) INK0112AX is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE ① ・Input impedance is high, and not necessary to JEIT

5.2. ink011bap1.pdf Size:109K _update-mosfet

INK0103AM1
INK0103AM1



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