INK011BAP1 PDF and Equivalents Search

 

INK011BAP1 PDF Specs and Replacement


   Type Designator: INK011BAP1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: SC-62
 

 INK011BAP1 substitution

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INK011BAP1 PDF Specs

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INK011BAP1

INK0112AX SERIES High speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING (Unit mm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5 voltage drive and low on resistance. 0.35 0.8 0.35 FEATURE Input impedance is high, and not necessary to JEIT... See More ⇒

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Detailed specifications: INK0102AM1 , INK0102AU1 , INK0103AC1 , INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , 2SK3878 , INK0200AC1 , INK0210AC1 , INK0210AP1 , INK021AAP1 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF .

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