INK011BAP1 Datasheet and Replacement
Type Designator: INK011BAP1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: SC-62
INK011BAP1 substitution
INK011BAP1 Datasheet (PDF)
ink0112ac1 ink0112am1 ink0112au1 int0112am1.pdf
INK0112AX SERIES High speed switching Silicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING (Unitmm) INK0112A is a Silicon N-channel MOSFET. This product is most suitable for low voltage INK0112AU1 use such as portable machinery , because of low 1.5voltage drive and low on resistance. 0.35 0.80.35FEATURE Input impedance is high, and not necessary to JEIT
Datasheet: INK0102AM1 , INK0102AU1 , INK0103AC1 , INK0103AM1 , INK0103AU1 , INK0112AC1 , INK0112AM1 , INK0112AU1 , IRFP260 , INK0200AC1 , INK0210AC1 , INK0210AP1 , INK021AAP1 , INK0302AC1 , INK0310AP1 , IVN5001ANE , IRC530PBF .
History: 2N90
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History: 2N90
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