IRC830PBF Specs and Replacement
Type Designator: IRC830PBF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 91 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220-5
IRC830PBF substitution
- MOSFET ⓘ Cross-Reference Search
IRC830PBF datasheet
Detailed specifications: IRC530PBF, IRC540PBF, IRC630PBF, IRC634PBF, IRC640PBF, IRC644PBF, IRC730PBF, IRC740PBF, 5N65, IRC840PBF, IRCZ24, IRCZ24PBF, IRCZ34, ISL9N302AP3, ISL9N302AS3ST, IVN5000AND, IVN5000ANE
Keywords - IRC830PBF MOSFET specs
IRC830PBF cross reference
IRC830PBF equivalent finder
IRC830PBF pdf lookup
IRC830PBF substitution
IRC830PBF replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRLZ20 | BRS1N70 | BSC054N04NSG | BSC050N03LS | IRLZ24NL
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E
Popular searches
2sd287 | 2sd438 | a1492 | hy4008 | ncep039n10m | 20n50 | 2sc869 | tip29 transistor equivalent