IRCZ24 Specs and Replacement
Type Designator: IRCZ24
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 360 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-220-5
IRCZ24 substitution
- MOSFET ⓘ Cross-Reference Search
IRCZ24 datasheet
ircz24 ircz24pbf.pdf
PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒
ircz24.pdf
PD - 9.615A IRCZ24 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 55V Current Sense 175 C Operating Temperature RDS(on) = 0.040 Fast Switching Ease of Paralleling ID = 26A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒
Detailed specifications: IRC630PBF, IRC634PBF, IRC640PBF, IRC644PBF, IRC730PBF, IRC740PBF, IRC830PBF, IRC840PBF, IRFB3607, IRCZ24PBF, IRCZ34, ISL9N302AP3, ISL9N302AS3ST, IVN5000AND, IVN5000ANE, IVN5000ANF, IVN5000ANH
Keywords - IRCZ24 MOSFET specs
IRCZ24 cross reference
IRCZ24 equivalent finder
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IRCZ24 substitution
IRCZ24 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IXFK73N30
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