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IRCZ34 Specs and Replacement

Type Designator: IRCZ34

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-220-5

IRCZ34 substitution

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IRCZ34 datasheet

 ..1. Size:128K  international rectifier
 ircz34.pdf pdf_icon

IRCZ34

PD - 9.590A IRCZ34 HEXFET Power MOSFET Dynamic dv/dt Rating VDSS = 60V Current Sense 175 C Operating Temperature RDS(on) = 0.050 Fast Switching Ease of Paralleling ID = 30A Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and... See More ⇒

Detailed specifications: IRC640PBF, IRC644PBF, IRC730PBF, IRC740PBF, IRC830PBF, IRC840PBF, IRCZ24, IRCZ24PBF, IRF530, ISL9N302AP3, ISL9N302AS3ST, IVN5000AND, IVN5000ANE, IVN5000ANF, IVN5000ANH, IVN5001AND, IVN5001ANF

Keywords - IRCZ34 MOSFET specs

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