All MOSFET. IRCZ34 Datasheet

 

IRCZ34 Datasheet and Replacement


   Type Designator: IRCZ34
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-220-5
 

 IRCZ34 substitution

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IRCZ34 Datasheet (PDF)

 ..1. Size:128K  international rectifier
 ircz34.pdf pdf_icon

IRCZ34

PD - 9.590AIRCZ34HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.050 Fast Switching Ease of ParallelingID = 30A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

Datasheet: IRC640PBF , IRC644PBF , IRC730PBF , IRC740PBF , IRC830PBF , IRC840PBF , IRCZ24 , IRCZ24PBF , AO4407 , ISL9N302AP3 , ISL9N302AS3ST , IVN5000AND , IVN5000ANE , IVN5000ANF , IVN5000ANH , IVN5001AND , IVN5001ANF .

History: YTF630 | AONR36368

Keywords - IRCZ34 MOSFET datasheet

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