IRCZ34 Datasheet and Replacement
Type Designator: IRCZ34
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 640 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-220-5
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IRCZ34 Datasheet (PDF)
ircz34.pdf

PD - 9.590AIRCZ34HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.050 Fast Switching Ease of ParallelingID = 30A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: IPD90N04S4-05 | SM7506NF | 2SJ400 | HM6602 | APT901R3AN | QM12N70F | SHD226302
Keywords - IRCZ34 MOSFET datasheet
IRCZ34 cross reference
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History: IPD90N04S4-05 | SM7506NF | 2SJ400 | HM6602 | APT901R3AN | QM12N70F | SHD226302



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