All MOSFET. IRCZ34 Datasheet

 

IRCZ34 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRCZ34
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-220-5

 IRCZ34 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRCZ34 Datasheet (PDF)

 ..1. Size:128K  international rectifier
 ircz34.pdf

IRCZ34 IRCZ34

PD - 9.590AIRCZ34HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 60V Current Sense 175C Operating TemperatureRDS(on) = 0.050 Fast Switching Ease of ParallelingID = 30A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance and

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AM7366N

 

 
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