IXCY01N90E Datasheet and Replacement

   Type Designator: IXCY01N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 137 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm
   Package: TO-252
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