IXCY01N90E MOSFET Datasheet: N-Ch, 900V, 0.25A. Full specification with pinout and replacement list

IXCY01N90E Specs and Replacement

Type Designator: IXCY01N90E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 137 nS

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm

Package: TO-252

IXCY01N90E substitution

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IXCY01N90E datasheet

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VDSS = 900 V IXCP 01N90E Gate Controlled ID(limit) = 250mA IXCY 01N90E Current Limiter RDS(on)= 80 N-Channel, Enhancement Mode D G S Symbol Test Conditions Maximum Ratings TO-252 (IXCY) VDSS TJ = 25 C to 150 C 900 V TAB VDGR TJ = 25 C to 150 C; RGS = 1 M 900 V G VGS Continuous 20 V S VGSM Transient 30 V PD TC = 25 C40 W TO-220 (IXCP) TJ -55... See More ⇒

Detailed specifications: IVN5000AND, IVN5000ANE, IVN5000ANF, IVN5000ANH, IVN5001AND, IVN5001ANF, IVN5001ANH, IXCP01N90E, IRF1407, IPI70R950CE, IPI05CN10N, SCT3060AR, 2SK2071-01S, FIR4N65AFG, MTM45N05E, MTP45N05E, SSS45N20B