All MOSFET. IXCY01N90E Datasheet

 

IXCY01N90E MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXCY01N90E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 137 nS
   Cossⓘ - Output Capacitance: 24 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 80 Ohm
   Package: TO-252

 IXCY01N90E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXCY01N90E Datasheet (PDF)

 ..1. Size:114K  ixys
 ixcp01n90e ixcy01n90e.pdf

IXCY01N90E IXCY01N90E

VDSS = 900 VIXCP 01N90EGate ControlledID(limit) = 250mAIXCY 01N90ECurrent LimiterRDS(on)= 80 N-Channel, Enhancement ModeDGSSymbol Test Conditions Maximum Ratings TO-252 (IXCY)VDSS TJ = 25C to 150C 900 VTABVDGR TJ = 25C to 150C; RGS = 1 M 900 V GVGS Continuous 20 V SVGSM Transient 30 VPD TC = 25C40 WTO-220 (IXCP)TJ -55

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: HU60N03 | SPN4412WS8RG

 

 
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