MTP45N05E PDF and Equivalents Search

 

MTP45N05E Specs and Replacement

Type Designator: MTP45N05E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO220AB

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MTP45N05E datasheet

 ..1. Size:1691K  motorola
 mtm45n05e mtp45n05e.pdf pdf_icon

MTP45N05E

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 9.1. Size:278K  cystek
 mtp452m3.pdf pdf_icon

MTP45N05E

Spec. No. C426M3 Issued Date 2012.02.07 CYStech Electronics Corp. Revised Date Page No. 1/8 30V P-CHANNEL Enhancement Mode MOSFET MTP452M3 Features Single Drive Requirement Low On-resistance, RDS(ON)=50m (typ.)@VGS=-10V, ID=-3.2A RDS(ON)=72m (typ.)@VGS=-4.5V, ID=-2.6A Ultra High Speed Switching Pb-free package Symbol Outline MTP452M3 SOT-89 ... See More ⇒

 9.2. Size:358K  cystek
 mtp452l3.pdf pdf_icon

MTP45N05E

Spec. No. C400L3 Issued Date 2009.06.22 CYStech Electronics Corp. Revised Date Page No. 1/7 P-Channel Enhancement Mode Power MOSFET BVDSS -30V MTP452L3 RDSON(MAX) 55m ID -6A Features Simple Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol Outline SOT-223 MTP452L3 D S G Gate D ... See More ⇒

Detailed specifications: IXCP01N90E, IXCY01N90E, IPI70R950CE, IPI05CN10N, SCT3060AR, 2SK2071-01S, FIR4N65AFG, MTM45N05E, 18N50, SSS45N20B, RFP4N35, RFP4N40, 9N90L-T47, CPC3701, CPC3701C, CPC3703, CPC3703C

Keywords - MTP45N05E MOSFET specs

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