SSS45N20B Specs and Replacement
Type Designator: SSS45N20B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 340 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO220F
SSS45N20B substitution
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SSS45N20B datasheet
ssp45n20b sss45n20b.pdf
November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 133 nC) planar, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒
Detailed specifications: IXCY01N90E, IPI70R950CE, IPI05CN10N, SCT3060AR, 2SK2071-01S, FIR4N65AFG, MTM45N05E, MTP45N05E, 20N50, RFP4N35, RFP4N40, 9N90L-T47, CPC3701, CPC3701C, CPC3703, CPC3703C, CPC3710
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