All MOSFET. CPMF-1200-S080B Datasheet

 

CPMF-1200-S080B MOSFET. Datasheet pdf. Equivalent


   Type Designator: CPMF-1200-S080B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 90.8 nC
   trⓘ - Rise Time: 13.6 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: CHIP

 CPMF-1200-S080B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CPMF-1200-S080B Datasheet (PDF)

 0.1. Size:811K  cree
 cpmf-1200-s080b.pdf

CPMF-1200-S080B CPMF-1200-S080B

CPMF-1200-S080B VDS = 1200 VZ-FeTTM Silicon Carbide MOSFET RDS(on) = 80 mN-Channel Enhancement Mode Qg = 90.8 nCBare DieFeatures PackageDD Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Lead-Free G GSS Benefits DIE Higher System Efficiency Reduced Cooling Requirements

 3.1. Size:566K  cree
 cpmf-1200-s160b.pdf

CPMF-1200-S080B CPMF-1200-S080B

CPMF-1200-S160B VDS = 1200 VZ-FeTTM Silicon Carbide MOSFET RDS(on) = 160 mN-Channel Enhancement Mode Qg = 47 nCBare DieFeatures PackageDD Industry Leading RDS(on) High Speed SwitchingGate Low Capacitances Easy to ParallelSource Source Simple to Drive Lead-FreeG GSS Benefits DIE Higher System Efficiency Reduced Coo

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