All MOSFET. CPMF-1200-S080B Datasheet

 

CPMF-1200-S080B Datasheet and Replacement


   Type Designator: CPMF-1200-S080B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.6 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: CHIP
 

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CPMF-1200-S080B Datasheet (PDF)

 0.1. Size:811K  cree
 cpmf-1200-s080b.pdf pdf_icon

CPMF-1200-S080B

CPMF-1200-S080B VDS = 1200 VZ-FeTTM Silicon Carbide MOSFET RDS(on) = 80 mN-Channel Enhancement Mode Qg = 90.8 nCBare DieFeatures PackageDD Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Lead-Free G GSS Benefits DIE Higher System Efficiency Reduced Cooling Requirements

 3.1. Size:566K  cree
 cpmf-1200-s160b.pdf pdf_icon

CPMF-1200-S080B

CPMF-1200-S160B VDS = 1200 VZ-FeTTM Silicon Carbide MOSFET RDS(on) = 160 mN-Channel Enhancement Mode Qg = 47 nCBare DieFeatures PackageDD Industry Leading RDS(on) High Speed SwitchingGate Low Capacitances Easy to ParallelSource Source Simple to Drive Lead-FreeG GSS Benefits DIE Higher System Efficiency Reduced Coo

Datasheet: CPH5852 , CPH5871 , CPH6311 , CPH6411 , CPH6429 , CPH6434 , CPH6635 , CPH6636R , IRF640 , CPMF-1200-S160B , CPT2301 , N0434N , N0439N , N0601N , N0602N , N0603N , N0604N .

History: HM603AK | PMG85XP | SIHFB9N65A | SUM110N08-07P | AFN8822 | PJE8400 | MTP2311V8

Keywords - CPMF-1200-S080B MOSFET datasheet

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