CPMF-1200-S080B Datasheet and Replacement
Type Designator: CPMF-1200-S080B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 313 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 13.6 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: CHIP
CPMF-1200-S080B Datasheet (PDF)
cpmf-1200-s080b.pdf

CPMF-1200-S080B VDS = 1200 VZ-FeTTM Silicon Carbide MOSFET RDS(on) = 80 mN-Channel Enhancement Mode Qg = 90.8 nCBare DieFeatures PackageDD Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Lead-Free G GSS Benefits DIE Higher System Efficiency Reduced Cooling Requirements
cpmf-1200-s160b.pdf

CPMF-1200-S160B VDS = 1200 VZ-FeTTM Silicon Carbide MOSFET RDS(on) = 160 mN-Channel Enhancement Mode Qg = 47 nCBare DieFeatures PackageDD Industry Leading RDS(on) High Speed SwitchingGate Low Capacitances Easy to ParallelSource Source Simple to Drive Lead-FreeG GSS Benefits DIE Higher System Efficiency Reduced Coo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: LSH80R980GT
Keywords - CPMF-1200-S080B MOSFET datasheet
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History: LSH80R980GT



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