CPMF-1200-S080B PDF and Equivalents Search

 

CPMF-1200-S080B Specs and Replacement

Type Designator: CPMF-1200-S080B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 313 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.6 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: CHIP

CPMF-1200-S080B substitution

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CPMF-1200-S080B datasheet

 0.1. Size:811K  cree
 cpmf-1200-s080b.pdf pdf_icon

CPMF-1200-S080B

CPMF-1200-S080B VDS = 1200 V Z-FeTTM Silicon Carbide MOSFET RDS(on) = 80 m N-Channel Enhancement Mode Qg = 90.8 nC Bare Die Features Package D D Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive Lead-Free G G S S Benefits DIE Higher System Efficiency Reduced Cooling Requirements ... See More ⇒

 3.1. Size:566K  cree
 cpmf-1200-s160b.pdf pdf_icon

CPMF-1200-S080B

CPMF-1200-S160B VDS = 1200 V Z-FeTTM Silicon Carbide MOSFET RDS(on) = 160 m N-Channel Enhancement Mode Qg = 47 nC Bare Die Features Package D D Industry Leading RDS(on) High Speed Switching Gate Low Capacitances Easy to Parallel Source Source Simple to Drive Lead-Free G G S S Benefits DIE Higher System Efficiency Reduced Coo... See More ⇒

Detailed specifications: CPH5852, CPH5871, CPH6311, CPH6411, CPH6429, CPH6434, CPH6635, CPH6636R, IRFP460, CPMF-1200-S160B, CPT2301, N0434N, N0439N, N0601N, N0602N, N0603N, N0604N

Keywords - CPMF-1200-S080B MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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