All MOSFET. CPT2301 Datasheet

 

CPT2301 Datasheet and Replacement


   Type Designator: CPT2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT-23
 

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CPT2301 Datasheet (PDF)

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CPT2301

CTP2301Crownpo TechnologyCTP2301 P-Channel Enhancement Mode MOSFET FeaturesDescription -20V/-2.3A,RDS(ON) =130 m @VGS=-4.5VThe CTP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using -20V/-1.9A,R =190 m @VGS=-2.5VDS(ON)high cell density , DMOS trench technology. Super high density cell design for extremelylow RDS(ON

Datasheet: CPH6311 , CPH6411 , CPH6429 , CPH6434 , CPH6635 , CPH6636R , CPMF-1200-S080B , CPMF-1200-S160B , IRFP460 , N0434N , N0439N , N0601N , N0602N , N0603N , N0604N , N2500N , NCE15H15T .

History: IRFI9540G | 7NM70G-TM3-T | AFN02N60T251T | MTP1406J3 | NTJD4158CT1G | HGB190N15S | STN3N45K3

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