CPT2301 Datasheet. Specs and Replacement

Type Designator: CPT2301

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 223 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT-23

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CPT2301 datasheet

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CPT2301

CTP2301 Crownpo Technology CTP2301 P-Channel Enhancement Mode MOSFET Features Description -20V/-2.3A,RDS(ON) =130 m @VGS=-4.5V The CTP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using -20V/-1.9A,R =190 m @VGS=-2.5V DS(ON) high cell density , DMOS trench technology. Super high density cell design for extremely low RDS(ON... See More ⇒

Detailed specifications: CPH6311, CPH6411, CPH6429, CPH6434, CPH6635, CPH6636R, CPMF-1200-S080B, CPMF-1200-S160B, IRF640, N0434N, N0439N, N0601N, N0602N, N0603N, N0604N, N2500N, NCE15H15T

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