All MOSFET. N0601N Datasheet

 

N0601N Datasheet and Replacement


   Type Designator: N0601N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-263
 

 N0601N substitution

   - MOSFET ⓘ Cross-Reference Search

 

N0601N Datasheet (PDF)

 ..1. Size:211K  renesas
 n0601n.pdf pdf_icon

N0601N

Preliminary Data Sheet R07DS0557EJ0100N0601N Rev.1.00Nov 07, 2011N-CHANNEL MOSFET FOR SWITCHING Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on = 4.2 m MAX. (VGS = 10 V, ID = 50 A) ) Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)

 9.1. Size:63K  vishay
 tn0601l vn0606l vn66afd.pdf pdf_icon

N0601N

TN0601L, VN0606L, VN66AFDVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 1.2 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMO

Datasheet: CPH6434 , CPH6635 , CPH6636R , CPMF-1200-S080B , CPMF-1200-S160B , CPT2301 , N0434N , N0439N , IRF640N , N0602N , N0603N , N0604N , N2500N , NCE15H15T , NCV8401A , NCV8401ADTRKG , NCV8401DTRKG .

History: SWB16N70K | HM3N10PR | SM7A24NSFP | STF13NM60ND | 2SK2642-01MR | NTD4809N-1G | QS5U33

Keywords - N0601N MOSFET datasheet

 N0601N cross reference
 N0601N equivalent finder
 N0601N lookup
 N0601N substitution
 N0601N replacement

 

 
Back to Top

 


 
.