N0601N MOSFET Datasheet: N-Ch, 60V, 100A. Full specification with pinout and replacement list

N0601N Specs and Replacement

Type Designator: N0601N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO-263

N0601N substitution

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N0601N datasheet

..1. Size:211K renesas
n0601n.pdf pdf_icon

Preliminary Data Sheet R07DS0557EJ0100 N0601N Rev.1.00 Nov 07, 2011 N-CHANNEL MOSFET FOR SWITCHING Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on = 4.2 m MAX. (VGS = 10 V, ID = 50 A) ) Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) ... See More ⇒

9.1. Size:63K vishay
tn0601l vn0606l vn66afd.pdf pdf_icon

TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47 VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33 VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 1.2 W D Low Offset Voltage D Direct Logic-Level Interface TTL/CMO... See More ⇒

Detailed specifications: CPH6434, CPH6635, CPH6636R, CPMF-1200-S080B, CPMF-1200-S160B, CPT2301, N0434N, N0439N, IRFB4110, N0602N, N0603N, N0604N, N2500N, NCE15H15T, NCV8401A, NCV8401ADTRKG, NCV8401DTRKG