All MOSFET. N0601N Datasheet

 

N0601N Datasheet and Replacement


   Type Designator: N0601N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 133 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-263
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N0601N Datasheet (PDF)

 ..1. Size:211K  renesas
 n0601n.pdf pdf_icon

N0601N

Preliminary Data Sheet R07DS0557EJ0100N0601N Rev.1.00Nov 07, 2011N-CHANNEL MOSFET FOR SWITCHING Description The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on = 4.2 m MAX. (VGS = 10 V, ID = 50 A) ) Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)

 9.1. Size:63K  vishay
 tn0601l vn0606l vn66afd.pdf pdf_icon

N0601N

TN0601L, VN0606L, VN66AFDVishay SiliconixN-Channel 60-V (D-S) MOSFETsPRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46FEATURES BENEFITS APPLICATIONSD Low On-Resistance: 1.2 W D Low Offset Voltage D Direct Logic-Level Interface: TTL/CMO

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SJ473-01S | TPC8027

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