N0604N MOSFET. Datasheet pdf. Equivalent
Type Designator: N0604N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 116 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 82 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 75 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 310 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
N0604N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
N0604N Datasheet (PDF)
n0604n.pdf
Data SheetN0604N R07DS0850EJ0100N-channel MOSFET Rev.1.0060 V, 82 A, 6.5 m Aug 27, 2012Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 6.5 m MAX. (VGS = 10 V, ID = 41 A) Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) High curr
tn0604.pdf
Supertex inc. TN0604N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance (140pF typical)combination produces a dev
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