All MOSFET. N0604N Datasheet

 

N0604N Datasheet and Replacement


   Type Designator: N0604N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 116 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

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N0604N Datasheet (PDF)

 ..1. Size:141K  renesas
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N0604N

Data SheetN0604N R07DS0850EJ0100N-channel MOSFET Rev.1.0060 V, 82 A, 6.5 m Aug 27, 2012Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS (on) = 6.5 m MAX. (VGS = 10 V, ID = 41 A) Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) High curr

 9.1. Size:611K  supertex
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N0604N

Supertex inc. TN0604N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Low threshold (1.6V max.) This low threshold, enhancement-mode (normally-off)transistor utilizes a vertical DMOS structure and Supertexs High input impedancewell-proven, silicon-gate manufacturing process. This Low input capacitance (140pF typical)combination produces a dev

Datasheet: CPMF-1200-S080B , CPMF-1200-S160B , CPT2301 , N0434N , N0439N , N0601N , N0602N , N0603N , IRF3710 , N2500N , NCE15H15T , NCV8401A , NCV8401ADTRKG , NCV8401DTRKG , NCV8402A , NCV8402AD , NCV8402ASTT1G .

History: APT6025BVFR | APT6029BLL | AM2394NE | CEU06N7 | SEFY9130C | APT38N60BC6 | 2SJ279S

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