All MOSFET. N2500N Datasheet

 

N2500N Datasheet and Replacement


   Type Designator: N2500N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.8 Ohm
   Package: SC-96
 
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N2500N Datasheet (PDF)

 ..1. Size:274K  renesas
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N2500N

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:124K  diodes
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N2500N

DMN2500UFB4N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(on) max Very Low Gate Threshold Voltage VGS(TH), 1.0V max TA = 25C Low Input Capacitance Fast Switching Speed 0.4 @ VGS = 4.5V 1A 20V Ultra-Small Surfaced Mount Package 0.7 @ VGS = 1.8V 0.8A Ultra-low package profile, 0.4mm max

Datasheet: CPMF-1200-S160B , CPT2301 , N0434N , N0439N , N0601N , N0602N , N0603N , N0604N , AON6414A , NCE15H15T , NCV8401A , NCV8401ADTRKG , NCV8401DTRKG , NCV8402A , NCV8402AD , NCV8402ASTT1G , NCV8403A .

History: FXN0406H | IPAN70R450P7S

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