All MOSFET. NDB610BE Datasheet

 

NDB610BE MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDB610BE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 72 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO-263AB

 NDB610BE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDB610BE Datasheet (PDF)

 ..1. Size:63K  fairchild semi
 ndb610ae ndb610b ndb610be ndp610ae ndp610b ndp610be.pdf

NDB610BE NDB610BE

May 1994 NDP610A / NDP610AE / NDP610B / NDP610BENDB610A / NDB610AE / NDB610B / NDB610BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field26 and 24A, 100V. RDS(ON) = 0.065 and 0.080. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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