NDB710AE Datasheet. Specs and Replacement

Type Designator: NDB710AE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 111 nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: TO-263AB

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NDB710AE datasheet

 ..1. Size:58K  fairchild semi
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NDB710AE

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BE NDB710A / NDB710AE / NDB710B / NDB710BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field 42 and 40A, 100V. RDS(ON) = 0.038 and 0.042 . effect transistors are produced using Fairchild's Critical DC electrical parameters specified at proprietary, high cell den... See More ⇒

Detailed specifications: NDB608B, NDB608BE, NDB610AE, NDB610B, NDB610BE, NDB708AE, NDB708B, NDB708BE, K4145, NDB710B, NDB710BE, NDBA070N10B, NDBA100N10B, NDBA170N06A, NDBA180N10B, NDD01N60, NDD02N40

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