All MOSFET. NDB710AE Datasheet

 

NDB710AE Datasheet and Replacement


   Type Designator: NDB710AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-263AB
 

 NDB710AE substitution

   - MOSFET ⓘ Cross-Reference Search

 

NDB710AE Datasheet (PDF)

 ..1. Size:58K  fairchild semi
 ndb710ae ndb710b ndb710be ndp710ae ndp710b ndp710be.pdf pdf_icon

NDB710AE

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NDB608B , NDB608BE , NDB610AE , NDB610B , NDB610BE , NDB708AE , NDB708B , NDB708BE , IRFB3607 , NDB710B , NDB710BE , NDBA070N10B , NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , NDD02N40 .

History: OSG70R1K4FF | PMZ320UPE | IXTA4N150HV | SLD60R380S2

Keywords - NDB710AE MOSFET datasheet

 NDB710AE cross reference
 NDB710AE equivalent finder
 NDB710AE lookup
 NDB710AE substitution
 NDB710AE replacement

 

 
Back to Top

 


 
.