All MOSFET. NDD01N60 Datasheet

 

NDD01N60 Datasheet and Replacement


   Type Designator: NDD01N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: DPAK IPAK
 

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NDD01N60 Datasheet (PDF)

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NDD01N60

NDD01N60, NDT01N60N-Channel Power MOSFET600 V, 8.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 8.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Continuou

Datasheet: NDB708BE , NDB710AE , NDB710B , NDB710BE , NDBA070N10B , NDBA100N10B , NDBA170N06A , NDBA180N10B , AON6380 , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , NDD60N550U1 , NDD60N745U1 , NDD60N900U1 , NDDL01N60Z .

History: HCS80R1K4ST | AM30N10-70DE | HCS90R800S | OSG65R900DF | FDPF14N30T | NDD02N40 | IPI60R380C6

Keywords - NDD01N60 MOSFET datasheet

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