All MOSFET. NDD01N60 Datasheet

 

NDD01N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDD01N60
   Marking Code: 01N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: DPAK IPAK

 NDD01N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDD01N60 Datasheet (PDF)

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 ndd01n60 ndt01n60.pdf

NDD01N60 NDD01N60

NDD01N60, NDT01N60N-Channel Power MOSFET600 V, 8.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 8.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Continuou

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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