NDD01N60 Datasheet and Replacement
Type Designator: NDD01N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.1 nS
Cossⓘ - Output Capacitance: 22 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: DPAK IPAK
NDD01N60 substitution
NDD01N60 Datasheet (PDF)
ndd01n60 ndt01n60.pdf

NDD01N60, NDT01N60N-Channel Power MOSFET600 V, 8.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)600 V 8.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 600 VD (2)Continuou
Datasheet: NDB708BE , NDB710AE , NDB710B , NDB710BE , NDBA070N10B , NDBA100N10B , NDBA170N06A , NDBA180N10B , IRLZ44N , NDD02N40 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , NDD60N550U1 , NDD60N745U1 , NDD60N900U1 , NDDL01N60Z .
History: PTF27N80 | HUF75623S3ST
Keywords - NDD01N60 MOSFET datasheet
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History: PTF27N80 | HUF75623S3ST



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