NDD01N60 Datasheet. Specs and Replacement

Type Designator: NDD01N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.1 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: DPAK IPAK

NDD01N60 substitution

- MOSFET ⓘ Cross-Reference Search

 

NDD01N60 datasheet

 ..1. Size:125K  onsemi
 ndd01n60 ndt01n60.pdf pdf_icon

NDD01N60

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 600 V 8.5 W @ 10 V Parameter Symbol NDD NDT Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 600 V D (2) Continuou... See More ⇒

Detailed specifications: NDB708BE, NDB710AE, NDB710B, NDB710BE, NDBA070N10B, NDBA100N10B, NDBA170N06A, NDBA180N10B, AON6380, NDD02N40, NDD03N40Z, NDD03N80Z, NDD60N360U1, NDD60N550U1, NDD60N745U1, NDD60N900U1, NDDL01N60Z

Keywords - NDD01N60 MOSFET specs

 NDD01N60 cross reference

 NDD01N60 equivalent finder

 NDD01N60 pdf lookup

 NDD01N60 substitution

 NDD01N60 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs