NDD02N40 Datasheet. Specs and Replacement

Type Designator: NDD02N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: DPAK IPAK

NDD02N40 substitution

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NDD02N40 datasheet

 ..1. Size:98K  onsemi
 ndd02n40 ndt02n40.pdf pdf_icon

NDD02N40

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 400 V 5.5 W @ 10 V Parameter Symbol NDD NDT Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 400 V D (2) Gate-to-S... See More ⇒

 8.1. Size:143K  onsemi
 ndf02n60z ndp02n60z ndd02n60z.pdf pdf_icon

NDD02N40

NDF02N60Z, NDP02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features http //onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected Gate VDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested 600 V 4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant N-Channel ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) D (2... See More ⇒

Detailed specifications: NDB710AE, NDB710B, NDB710BE, NDBA070N10B, NDBA100N10B, NDBA170N06A, NDBA180N10B, NDD01N60, IRF530, NDD03N40Z, NDD03N80Z, NDD60N360U1, NDD60N550U1, NDD60N745U1, NDD60N900U1, NDDL01N60Z, NDDP010N25AZ

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