All MOSFET. NDD02N40 Datasheet

 

NDD02N40 Datasheet and Replacement


   Type Designator: NDD02N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: DPAK IPAK
 

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NDD02N40 Datasheet (PDF)

 ..1. Size:98K  onsemi
 ndd02n40 ndt02n40.pdf pdf_icon

NDD02N40

NDD02N40, NDT02N40N-Channel Power MOSFET400 V, 5.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)400 V 5.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 400 VD (2)Gate-to-S

 8.1. Size:143K  onsemi
 ndf02n60z ndp02n60z ndd02n60z.pdf pdf_icon

NDD02N40

NDF02N60Z, NDP02N60Z,NDD02N60ZN-Channel Power MOSFET600 V, 4.8 WFeatureshttp://onsemi.com Low ON Resistance Low Gate Charge ESD Diode-Protected GateVDSS RDS(on) (MAX) @ 1 A 100% Avalanche Tested600 V4.8 W These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantN-ChannelABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)D (2

Datasheet: NDB710AE , NDB710B , NDB710BE , NDBA070N10B , NDBA100N10B , NDBA170N06A , NDBA180N10B , NDD01N60 , IRF530 , NDD03N40Z , NDD03N80Z , NDD60N360U1 , NDD60N550U1 , NDD60N745U1 , NDD60N900U1 , NDDL01N60Z , NDDP010N25AZ .

History: AM30N10-78D | AM30N10-70DE | AM4832N | OSG65R900DF | FDPF14N30T | AP9468GS-HF | IRFI540N

Keywords - NDD02N40 MOSFET datasheet

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