All MOSFET. NDFPD1N150CG Datasheet

 

NDFPD1N150CG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NDFPD1N150CG
   Marking Code: D1N150C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.2 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
   Package: TO-220F

 NDFPD1N150CG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NDFPD1N150CG Datasheet (PDF)

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 ndfpd1n150c ndfpd1n150cg.pdf

NDFPD1N150CG NDFPD1N150CG

Ordering number : ENA2236 NDFPD1N150C N-Channel Power MOSFEThttp://onsemi.com 1500V, 0.1A, 150, TO-220F-3FS Features On-resistance RDS(on)=100(typ.) Input Capacitance Ciss=80pF(typ.) 10V drive Specifications TO-220F-3FSAbsolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS 1500 V Gate to Source Vo

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: TPA60R170MFD | NCE65TF180F | SML30B48

 

 
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