All MOSFET. NDP710AE Datasheet

 

NDP710AE Datasheet and Replacement


   Type Designator: NDP710AE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 111 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO-220
 

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NDP710AE Datasheet (PDF)

 ..1. Size:58K  fairchild semi
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NDP710AE

May 1994 NDP710A / NDP710AE / NDP710B / NDP710BENDB710A / NDB710AE / NDB710B / NDB710BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field42 and 40A, 100V. RDS(ON) = 0.038 and 0.042. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell den

Datasheet: NDP608B , NDP608BE , NDP610AE , NDP610B , NDP610BE , NDP708AE , NDP708B , NDP708BE , IRF730 , NDP710B , NDP710BE , NDPL070N10B , NDPL070N10BG , NDPL100N10B , NDPL100N10BG , NDPL180N10B , NDPL180N10BG .

History: SML501R1GN | SFB096N200C3 | 2SJ485 | RJK0223DNS | NP90N04VLG | AM110N06-08P | SFF75N10N

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