NDPL070N10BG Datasheet and Replacement
Type Designator: NDPL070N10BG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 72 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 840 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0108 Ohm
Package: TO-220
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NDPL070N10BG Datasheet (PDF)
ndpl070n10b ndpl070n10bg.pdf

NDPL070N10B Advance Information www.onsemi.com Power MOSFET 100V, 10.8m, 70A, N-Channel Features VDSS RDS(on) Max ID Max Low On-Resistance 10.8 m@15V Low Gate Charge 100V 70A 12.8 m@10V High Speed Switching 100% Avalanche Tested Pb-Free and RoHS Compliance Electrical Connection N-Channel Applications D(2)Specifications Absolute
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: IRF2807PBF | LP3218DT1G | SFF40N30MUB | SI2308 | CJPF04N80 | MPGJ10R7 | AP1RA03GMT-HF
Keywords - NDPL070N10BG MOSFET datasheet
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History: IRF2807PBF | LP3218DT1G | SFF40N30MUB | SI2308 | CJPF04N80 | MPGJ10R7 | AP1RA03GMT-HF



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