All MOSFET. NDT02N40 Datasheet

 

NDT02N40 Datasheet and Replacement


   Type Designator: NDT02N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: SOT-223
 

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NDT02N40 Datasheet (PDF)

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NDT02N40

NDD02N40, NDT02N40N-Channel Power MOSFET400 V, 5.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)400 V 5.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 400 VD (2)Gate-to-S

Datasheet: NDS336P , NDS352P , NDS355N , NDS8410 , NDS9405 , NDS9430 , NDS9430A , NDT01N60 , 5N50 , NDTL03N150C , NDTL03N150CG , NDUL03N150C , NDUL03N150CG , NDUL09N150C , NDUL09N150CG , NID9N05ACLT4G , NID9N05CLT4G .

History: ST2315S23R | SGO100N08L | IRFU3710ZPBF | IRF7751G | JFFC7N65E | IRFH8303PBF | STFW3N150

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