NDT02N40 Datasheet and Replacement
Type Designator: NDT02N40
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: SOT-223
NDT02N40 substitution
NDT02N40 Datasheet (PDF)
ndd02n40 ndt02n40.pdf
NDD02N40, NDT02N40N-Channel Power MOSFET400 V, 5.5 WFeatures 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantV(BR)DSS RDS(ON) MAXABSOLUTE MAXIMUM RATINGS (TJ = 25C unless otherwise noted)400 V 5.5 W @ 10 VParameter Symbol NDD NDT UnitN-Channel MOSFETDrain-to-Source Voltage VDSS 400 VD (2)Gate-to-S
Datasheet: NDS336P , NDS352P , NDS355N , NDS8410 , NDS9405 , NDS9430 , NDS9430A , NDT01N60 , IRFP064N , NDTL03N150C , NDTL03N150CG , NDUL03N150C , NDUL03N150CG , NDUL09N150C , NDUL09N150CG , NID9N05ACLT4G , NID9N05CLT4G .
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