NDT02N40 Datasheet. Specs and Replacement

Type Designator: NDT02N40

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: SOT-223

NDT02N40 substitution

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NDT02N40 datasheet

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NDT02N40

NDD02N40, NDT02N40 N-Channel Power MOSFET 400 V, 5.5 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant V(BR)DSS RDS(ON) MAX ABSOLUTE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) 400 V 5.5 W @ 10 V Parameter Symbol NDD NDT Unit N-Channel MOSFET Drain-to-Source Voltage VDSS 400 V D (2) Gate-to-S... See More ⇒

Detailed specifications: NDS336P, NDS352P, NDS355N, NDS8410, NDS9405, NDS9430, NDS9430A, NDT01N60, IRFP064N, NDTL03N150C, NDTL03N150CG, NDUL03N150C, NDUL03N150CG, NDUL09N150C, NDUL09N150CG, NID9N05ACLT4G, NID9N05CLT4G

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