NILMS4501NR2G Datasheet. Specs and Replacement

Type Designator: NILMS4501NR2G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 870 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PLLP4

NILMS4501NR2G substitution

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NILMS4501NR2G datasheet

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NILMS4501NR2G

NILMS4501N Power MOSFET with Current Mirror FET 24 V, 9.5 A, N-Channel, ESD Protected, 1 250 Current Mirror, SO-8 Leadless http //onsemi.com N-Channel MOSFET with 1 250 current mirror device utilizing the latest ON Semiconductor technology to achieve low figure of merit VDSS RDS(on) Typ ID MAX while keeping a high accuracy in the linear region. This device takes 24 V 12 mW @ 4.5 V 9.5... See More ⇒

Detailed specifications: NDTL03N150CG, NDUL03N150C, NDUL03N150CG, NDUL09N150C, NDUL09N150CG, NID9N05ACLT4G, NID9N05CLT4G, NILMS4501NR2, 50N06, NMSD200B01-7, NP100N04MDH, NP100N04MUH, NP100N04NDH, NP100N04NUH, NP100N04NUJ, NP100N04PDH, NP100N04PUH

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