All MOSFET. NILMS4501NR2G Datasheet

 

NILMS4501NR2G Datasheet and Replacement


   Type Designator: NILMS4501NR2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PLLP4
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NILMS4501NR2G Datasheet (PDF)

 ..1. Size:90K  onsemi
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NILMS4501NR2G

NILMS4501NPower MOSFET withCurrent Mirror FET24 V, 9.5 A, N-Channel, ESD Protected,1:250 Current Mirror, SO-8 Leadlesshttp://onsemi.comN-Channel MOSFET with 1:250 current mirror device utilizing thelatest ON Semiconductor technology to achieve low figure of meritVDSS RDS(on) Typ ID MAXwhile keeping a high accuracy in the linear region. This device takes24 V 12 mW @ 4.5 V 9.5

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: JCS4AN120CA | RU3080L | SE6003C | SI2308 | IRFB3006G | STP9NB50FP | TK20V60W

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