All MOSFET. NILMS4501NR2G Datasheet

 

NILMS4501NR2G Datasheet and Replacement


   Type Designator: NILMS4501NR2G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PLLP4
 

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NILMS4501NR2G Datasheet (PDF)

 ..1. Size:90K  onsemi
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NILMS4501NR2G

NILMS4501NPower MOSFET withCurrent Mirror FET24 V, 9.5 A, N-Channel, ESD Protected,1:250 Current Mirror, SO-8 Leadlesshttp://onsemi.comN-Channel MOSFET with 1:250 current mirror device utilizing thelatest ON Semiconductor technology to achieve low figure of meritVDSS RDS(on) Typ ID MAXwhile keeping a high accuracy in the linear region. This device takes24 V 12 mW @ 4.5 V 9.5

Datasheet: NDTL03N150CG , NDUL03N150C , NDUL03N150CG , NDUL09N150C , NDUL09N150CG , NID9N05ACLT4G , NID9N05CLT4G , NILMS4501NR2 , 50N06 , NMSD200B01-7 , NP100N04MDH , NP100N04MUH , NP100N04NDH , NP100N04NUH , NP100N04NUJ , NP100N04PDH , NP100N04PUH .

History: IRFB3006G | IPI80N06S3-07 | SRT06N022HS | HSBA3062 | NCE30P50G | NTTFS5C680NL | 5N80

Keywords - NILMS4501NR2G MOSFET datasheet

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