All MOSFET. NILMS4501NR2G Datasheet

 

NILMS4501NR2G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NILMS4501NR2G
   Marking Code: 4501N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PLLP4

 NILMS4501NR2G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NILMS4501NR2G Datasheet (PDF)

 ..1. Size:90K  onsemi
 nilms4501n nilms4501nr2 nilms4501nr2g.pdf

NILMS4501NR2G NILMS4501NR2G

NILMS4501NPower MOSFET withCurrent Mirror FET24 V, 9.5 A, N-Channel, ESD Protected,1:250 Current Mirror, SO-8 Leadlesshttp://onsemi.comN-Channel MOSFET with 1:250 current mirror device utilizing thelatest ON Semiconductor technology to achieve low figure of meritVDSS RDS(on) Typ ID MAXwhile keeping a high accuracy in the linear region. This device takes24 V 12 mW @ 4.5 V 9.5

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 60N03

 

 
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