All MOSFET. NP16N06YLL Datasheet

 

NP16N06YLL Datasheet and Replacement


   Type Designator: NP16N06YLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: HSON
 

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NP16N06YLL Datasheet (PDF)

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NP16N06YLL

Data Sheet NP16N06YLL R07DS1124EJ010060 V 16 A N-channel Power MOS FET Rev.1.00Application: Automotive Oct 30, 2013Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 35 m MAX. (VGS = 10 V, ID = 8 A) Low Ciss: Ciss = 400 pF TYP. (VDS = 25 V,

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NP16N06YLL

Preliminary Data Sheet R07DS0362EJ0100NP16N04YUG Rev.1.00Jun 13, 2011MOS FIELD EFFECT TRANSISTOR Description The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 8 A) Low Ciss: Ciss = 740 pF TYP. (VDS = 25 V, VGS = 0 V) Designed f

Datasheet: NP160N04TDG , NP160N04TUG , NP160N04TUJ , NP160N04TUK , NP160N055TUJ , NP160N055TUK , NP161N04TUG , NP16N04YUG , IRLB4132 , NP180N04TUG , NP180N04TUJ , NP180N04TUK , NP180N055TUJ , NP180N055TUK , NP20N10YDF , NP20P04SLG , NP20P06SLG .

History: 2SK633 | WML13N80M3

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