NP16N06YLL MOSFET. Datasheet pdf. Equivalent

   Type Designator: NP16N06YLL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 84 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: HSON

NP16N06YLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS