All MOSFET. NP20N10YDF Datasheet

 

NP20N10YDF Datasheet and Replacement


   Type Designator: NP20N10YDF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: HSON
 

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NP20N10YDF Datasheet (PDF)

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NP20N10YDF

Preliminary Data Sheet NP20N10YDF R07DS0705EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Apr 17, 2012Description The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS =

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NP20N10YDF

VNP20N07"OMNIFET":FULLY AUTOPROTECTED POWER MOSFETTYPE V R Iclamp DS(on) limVNP20N07 70 V 0.05 20 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT32PIN1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THETO-220POWER MOSFET (ANALOG DRIVING) COMPATIBLE

Datasheet: NP161N04TUG , NP16N04YUG , NP16N06YLL , NP180N04TUG , NP180N04TUJ , NP180N04TUK , NP180N055TUJ , NP180N055TUK , P60NF06 , NP20P04SLG , NP20P06SLG , NP20P06YLG , NP22N055HHE , NP22N055HLE , NP22N055IHE , NP22N055ILE , NP22N055SHE .

History: HY10P10D | AFN2312A | HMS11N65K | AM4502C | LSG70R380GT | RU30P5H

Keywords - NP20N10YDF MOSFET datasheet

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