NP20N10YDF Datasheet. Specs and Replacement

Type Designator: NP20N10YDF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: HSON

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NP20N10YDF datasheet

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NP20N10YDF

Preliminary Data Sheet NP20N10YDF R07DS0705EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Apr 17, 2012 Description The NP20N10YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 55 m MAX. (VGS = 10 V, ID = 10 A) RDS(on) = 68 m MAX. (VGS = 5 V, ID = 10 A) RDS(on) = 74 m MAX. (VGS =... See More ⇒

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NP20N10YDF

VNP20N07 "OMNIFET" FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP20N07 70 V 0.05 20 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT 3 2 PIN 1 ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE TO-220 POWER MOSFET (ANALOG DRIVING) COMPATIBLE ... See More ⇒

Detailed specifications: NP161N04TUG, NP16N04YUG, NP16N06YLL, NP180N04TUG, NP180N04TUJ, NP180N04TUK, NP180N055TUJ, NP180N055TUK, AO4407, NP20P04SLG, NP20P06SLG, NP20P06YLG, NP22N055HHE, NP22N055HLE, NP22N055IHE, NP22N055ILE, NP22N055SHE

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