NP23N06YDG Datasheet. Specs and Replacement

Type Designator: NP23N06YDG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: HSON

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NP23N06YDG datasheet

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NP23N06YDG

Preliminary Data Sheet NP23N06YDG R07DS0014EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 27 m MAX. (VGS = 10 V, ID = 11.5 A) Low Ciss Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le... See More ⇒

Detailed specifications: NP20P06SLG, NP20P06YLG, NP22N055HHE, NP22N055HLE, NP22N055IHE, NP22N055ILE, NP22N055SHE, NP22N055SLE, AO3407, NP28N10SDE, NP30N04QUK, NP32N055HDE, NP32N055HHE, NP32N055HLE, NP32N055IDE, NP32N055IHE, NP32N055ILE

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