All MOSFET. NP23N06YDG Datasheet

 

NP23N06YDG Datasheet and Replacement


   Type Designator: NP23N06YDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 27 nC
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: HSON
 

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NP23N06YDG Datasheet (PDF)

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NP23N06YDG

Preliminary Data Sheet NP23N06YDG R07DS0014EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 27 m MAX. (VGS = 10 V, ID = 11.5 A) Low Ciss: Ciss = 1200 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le

Datasheet: NP20P06SLG , NP20P06YLG , NP22N055HHE , NP22N055HLE , NP22N055IHE , NP22N055ILE , NP22N055SHE , NP22N055SLE , 7N60 , NP28N10SDE , NP30N04QUK , NP32N055HDE , NP32N055HHE , NP32N055HLE , NP32N055IDE , NP32N055IHE , NP32N055ILE .

History: JFPC2N80C | SNN3100L10Q | SRT15N110HTC | STB40NS15 | IRFB61N15D | IRHY9230CM

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