NP30N04QUK Datasheet. Specs and Replacement

Type Designator: NP30N04QUK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: HSON

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NP30N04QUK datasheet

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NP30N04QUK

Data Sheet NP30N04QUK R07DS1227EJ0100 40 V 30 A Dual N-channel Power MOS FET Rev.1.00 Application Automotive Nov 18, 2014 Description NP30N04QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 8 m MAX. (VGS = 10 V, ID = 15 A) Low Ciss Ciss = 1600 pF TYP.... See More ⇒

Detailed specifications: NP22N055HHE, NP22N055HLE, NP22N055IHE, NP22N055ILE, NP22N055SHE, NP22N055SLE, NP23N06YDG, NP28N10SDE, 20N50, NP32N055HDE, NP32N055HHE, NP32N055HLE, NP32N055IDE, NP32N055IHE, NP32N055ILE, NP32N055SDE, NP32N055SHE

Keywords - NP30N04QUK MOSFET specs

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