NP33N06YDG Datasheet. Specs and Replacement

Type Designator: NP33N06YDG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: HSON

NP33N06YDG substitution

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NP33N06YDG datasheet

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NP33N06YDG

Preliminary Data Sheet NP33N06YDG R07DS0015EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jul 01, 2010 Description The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 14 m MAX. (VGS = 10 V, ID = 16.5 A) Low Ciss Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le... See More ⇒

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NP33N06YDG

Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jun 30, 2011 Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 28 m MAX. (VGS = 10 V, ID = 17 A) Low Ciss Ciss = 1300 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le... See More ⇒

Detailed specifications: NP32N055HHE, NP32N055HLE, NP32N055IDE, NP32N055IHE, NP32N055ILE, NP32N055SDE, NP32N055SHE, NP32N055SLE, IRFB31N20D, NP33N075YDF, NP34N055HHE, NP34N055HLE, NP34N055IHE, NP34N055ILE, NP34N055SHE, NP34N055SLE, NP35N04YLG

Keywords - NP33N06YDG MOSFET specs

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