All MOSFET. NP33N06YDG Datasheet

 

NP33N06YDG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NP33N06YDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 33 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: HSON

 NP33N06YDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NP33N06YDG Datasheet (PDF)

 ..1. Size:222K  renesas
 np33n06ydg.pdf

NP33N06YDG NP33N06YDG

Preliminary Data Sheet NP33N06YDG R07DS0015EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 14 m MAX. (VGS = 10 V, ID = 16.5 A) Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le

 8.1. Size:224K  renesas
 np33n075ydf.pdf

NP33N06YDG NP33N06YDG

Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jun 30, 2011Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 28 m MAX. (VGS = 10 V, ID = 17 A) Low Ciss: Ciss = 1300 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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