All MOSFET. NP33N06YDG Datasheet

 

NP33N06YDG Datasheet and Replacement


   Type Designator: NP33N06YDG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: HSON
 

 NP33N06YDG substitution

   - MOSFET ⓘ Cross-Reference Search

 

NP33N06YDG Datasheet (PDF)

 ..1. Size:222K  renesas
 np33n06ydg.pdf pdf_icon

NP33N06YDG

Preliminary Data Sheet NP33N06YDG R07DS0015EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 14 m MAX. (VGS = 10 V, ID = 16.5 A) Low Ciss: Ciss = 2600 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le

 8.1. Size:224K  renesas
 np33n075ydf.pdf pdf_icon

NP33N06YDG

Preliminary Data Sheet NP33N075YDF R07DS0363EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jun 30, 2011Description The NP33N075YDF is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 28 m MAX. (VGS = 10 V, ID = 17 A) Low Ciss: Ciss = 1300 pF TYP. (VDS = 25 V, VGS = 0 V) Logic le

Datasheet: NP32N055HHE , NP32N055HLE , NP32N055IDE , NP32N055IHE , NP32N055ILE , NP32N055SDE , NP32N055SHE , NP32N055SLE , IRF730 , NP33N075YDF , NP34N055HHE , NP34N055HLE , NP34N055IHE , NP34N055ILE , NP34N055SHE , NP34N055SLE , NP35N04YLG .

History: NTMFS4120NT1G | VBFB2412

Keywords - NP33N06YDG MOSFET datasheet

 NP33N06YDG cross reference
 NP33N06YDG equivalent finder
 NP33N06YDG lookup
 NP33N06YDG substitution
 NP33N06YDG replacement

 

 
Back to Top

 


 
.