NP50N04YUK Datasheet. Specs and Replacement

Type Designator: NP50N04YUK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: HSON

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NP50N04YUK datasheet

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NP50N04YUK

Preliminary Data Sheet NP50N04YUK R07DS1003EJ0100 40 V 50 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 08, 2013 Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 25 A) Non logic level drive typ... See More ⇒

Detailed specifications: NP48N055EHE, NP48N055ELE, NP48N055KHE, NP48N055KLE, NP48N055MHE, NP48N055MLE, NP48N055NHE, NP48N055NLE, STP75NF75, NP50P03YDG, NP50P04KDG, NP50P04SDG, NP50P04SLG, NP50P06KDG, NP50P06SDG, NP52N055SUG, NP52N06SLG

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