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NP50N04YUK Specs and Replacement


   Type Designator: NP50N04YUK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 97 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: HSON
 

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NP50N04YUK datasheet

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NP50N04YUK

Preliminary Data Sheet NP50N04YUK R07DS1003EJ0100 40 V 50 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 08, 2013 Description The NP50N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 25 A) Non logic level drive typ... See More ⇒

Detailed specifications: NP48N055EHE , NP48N055ELE , NP48N055KHE , NP48N055KLE , NP48N055MHE , NP48N055MLE , NP48N055NHE , NP48N055NLE , 2SK3878 , NP50P03YDG , NP50P04KDG , NP50P04SDG , NP50P04SLG , NP50P06KDG , NP50P06SDG , NP52N055SUG , NP52N06SLG .

History: NP52N055SUG

Keywords - NP50N04YUK MOSFET specs

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