IXFA56N30X3 Specs and Replacement

Type Designator: IXFA56N30X3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 320 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TO-263

IXFA56N30X3 substitution

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IXFA56N30X3 datasheet

 ..1. Size:313K  ixys
 ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf pdf_icon

IXFA56N30X3

Preliminary Technical Information X3-Class HiPerFETTM VDSS = 300V IXFA56N30X3 Power MOSFET ID25 = 56A IXFP56N30X3 RDS(on) 27m IXFH56N30X3 N-Channel Enhancement Mode TO-263 (IXFA) Avalanche Rated G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C, RGS = 1M 300... See More ⇒

 9.1. Size:164K  ixys
 ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf pdf_icon

IXFA56N30X3

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 500V IXFY5N50P3 Power MOSFETs ID25 = 5A IXFA5N50P3 RDS(on) 1.65 IXFP5N50P3 N-Channel Enhancement Mode Avalanche Rated TO-252 (IXFY) Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V TO-263 AA (IXFA) VDGR TJ = 25 C to 150 C, R... See More ⇒

Detailed specifications: NP60N03SUG, NP60N04HLF, NP60N04ILF, NP60N04KUG, NP60N04MUG, NP60N04MUK, NP60N04NUK, IRL60SL216, NCEP15T14, IXFP56N30X3, IXFA12N65X2, IXFH12N65X2, IXFA8N85XHV, IXFP8N85X, IXFA36N20X3, IXFP36N20X3, IXTP12N70X2

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.