All MOSFET. IXFA56N30X3 Datasheet

 

IXFA56N30X3 Datasheet and Replacement


   Type Designator: IXFA56N30X3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO-263
 

 IXFA56N30X3 substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFA56N30X3 Datasheet (PDF)

 ..1. Size:313K  ixys
 ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf pdf_icon

IXFA56N30X3

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300

 9.1. Size:164K  ixys
 ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf pdf_icon

IXFA56N30X3

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

Datasheet: NP60N03SUG , NP60N04HLF , NP60N04ILF , NP60N04KUG , NP60N04MUG , NP60N04MUK , NP60N04NUK , IRL60SL216 , IRFP450 , IXFP56N30X3 , IXFA12N65X2 , IXFH12N65X2 , IXFA8N85XHV , IXFP8N85X , IXFA36N20X3 , IXFP36N20X3 , IXTP12N70X2 .

History: STP36NF06FP | WMN15N70C4 | WMM13N65EM | WTK4424 | UT4812Z | NCEP60ND30AG | JCS4N60R

Keywords - IXFA56N30X3 MOSFET datasheet

 IXFA56N30X3 cross reference
 IXFA56N30X3 equivalent finder
 IXFA56N30X3 lookup
 IXFA56N30X3 substitution
 IXFA56N30X3 replacement

 

 
Back to Top

 


 
.