All MOSFET. VN1206N1 Datasheet

 

VN1206N1 Datasheet and Replacement


   Type Designator: VN1206N1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3
 

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VN1206N1 Datasheet (PDF)

 0.1. Size:145K  supertex
 vn1206n1-n2-n5 vn1204n1-n2-n5 vn1210n1-n2-n5.pdf pdf_icon

VN1206N1

 7.1. Size:259K  inchange semiconductor
 vn1206n5.pdf pdf_icon

VN1206N1

isc N-Channel MOSFET Transistor VN1206N5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.1. Size:544K  supertex
 vn1206.pdf pdf_icon

VN1206N1

Supertex inc. VN1206N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

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Datasheet: IXFA8N85XHV , IXFP8N85X , IXFA36N20X3 , IXFP36N20X3 , IXTP12N70X2 , VN1204N5 , VN1210N5 , VN1204N1 , 13N50 , VN1210N1 , VN1204N2 , VN1206N2 , NP60N04PDK , NP60N04VDK , NP60N04VUK , NP60N055KUG , NP60N055MUK .

History: IPD60R3K4CE | SSF1109 | WML26N60C4 | IXCY01N90E

Keywords - VN1206N1 MOSFET datasheet

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