VN1206N1 Specs and Replacement

Type Designator: VN1206N1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-3

VN1206N1 substitution

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VN1206N1 datasheet

 0.1. Size:145K  supertex
 vn1206n1-n2-n5 vn1204n1-n2-n5 vn1210n1-n2-n5.pdf pdf_icon

VN1206N1

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 7.1. Size:259K  inchange semiconductor
 vn1206n5.pdf pdf_icon

VN1206N1

isc N-Channel MOSFET Transistor VN1206N5 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 8.1. Size:544K  supertex
 vn1206.pdf pdf_icon

VN1206N1

Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h... See More ⇒

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Detailed specifications: IXFA8N85XHV, IXFP8N85X, IXFA36N20X3, IXFP36N20X3, IXTP12N70X2, VN1204N5, VN1210N5, VN1204N1, 5N60, VN1210N1, VN1204N2, VN1206N2, NP60N04PDK, NP60N04VDK, NP60N04VUK, NP60N055KUG, NP60N055MUK

Keywords - VN1206N1 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.