VN1206N2 Specs and Replacement

Type Designator: VN1206N2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-39

VN1206N2 substitution

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VN1206N2 datasheet

 7.2. Size:259K  inchange semiconductor
vn1206n5.pdf pdf_icon

VN1206N2

isc N-Channel MOSFET Transistor VN1206N5 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 8.1. Size:544K  supertex
vn1206.pdf pdf_icon

VN1206N2

Supertex inc. VN1206 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h... See More ⇒

Detailed specifications: IXFP36N20X3, IXTP12N70X2, VN1204N5, VN1210N5, VN1204N1, VN1206N1, VN1210N1, VN1204N2, AO3407, NP60N04PDK, NP60N04VDK, NP60N04VUK, NP60N055KUG, NP60N055MUK, NP60N055NUK, NP60N055VUK, NP70N04MUG

Keywords - VN1206N2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.