All MOSFET. VN1206N2 Datasheet

 

VN1206N2 Datasheet and Replacement


   Type Designator: VN1206N2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-39
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VN1206N2 Datasheet (PDF)

 7.1. Size:145K  supertex
 vn1206n1-n2-n5 vn1204n1-n2-n5 vn1210n1-n2-n5.pdf pdf_icon

VN1206N2

 7.2. Size:259K  inchange semiconductor
 vn1206n5.pdf pdf_icon

VN1206N2

isc N-Channel MOSFET Transistor VN1206N5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.1. Size:544K  supertex
 vn1206.pdf pdf_icon

VN1206N2

Supertex inc. VN1206N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: FHF15N65A | SE1003 | MTN3205E3 | NTP30N06 | NCE40P06J | APT10M19BVFRG | FQA13N50CF109

Keywords - VN1206N2 MOSFET datasheet

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