2N6760JAN Datasheet. Specs and Replacement

Type Designator: 2N6760JAN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO3

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2N6760JAN datasheet

 8.1. Size:146K  international rectifier
 2n6760 irf330.pdf pdf_icon

2N6760JAN

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

 8.2. Size:138K  fairchild semi
 2n6759 2n6760.pdf pdf_icon

2N6760JAN

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 9.1. Size:142K  1
 2n6766.pdf pdf_icon

2N6760JAN

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 9.2. Size:140K  1
 2n6768.pdf pdf_icon

2N6760JAN

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Detailed specifications: 2N6758, 2N6758JAN, 2N6758JANTX, 2N6758JANTXV, 2N6758JTX, 2N6758JTXV, 2N6759, 2N6760, RFP50N06, 2N6760JANTX, 2N6760JANTXV, 2N6760JTX, 2N6760JTXV, 2N6761, 2N6762, 2N6762JAN, 2N6762JANTX

Keywords - 2N6760JAN MOSFET specs

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