2N6760JAN PDF and Equivalents Search

 

2N6760JAN Specs and Replacement


   Type Designator: 2N6760JAN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO3
 

 2N6760JAN substitution

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2N6760JAN datasheet

 8.1. Size:146K  international rectifier
 2n6760 irf330.pdf pdf_icon

2N6760JAN

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

 8.2. Size:138K  fairchild semi
 2n6759 2n6760.pdf pdf_icon

2N6760JAN

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 9.1. Size:142K  1
 2n6766.pdf pdf_icon

2N6760JAN

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 9.2. Size:140K  1
 2n6768.pdf pdf_icon

2N6760JAN

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Detailed specifications: 2N6758 , 2N6758JAN , 2N6758JANTX , 2N6758JANTXV , 2N6758JTX , 2N6758JTXV , 2N6759 , 2N6760 , AON6380 , 2N6760JANTX , 2N6760JANTXV , 2N6760JTX , 2N6760JTXV , 2N6761 , 2N6762 , 2N6762JAN , 2N6762JANTX .

Keywords - 2N6760JAN MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
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