SWI069R10VS PDF and Equivalents Search

 

SWI069R10VS PDF Specs and Replacement


   Type Designator: SWI069R10VS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 158.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 1590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: TO251
 

 SWI069R10VS substitution

   - MOSFET ⓘ Cross-Reference Search

 

SWI069R10VS PDF Specs

 ..1. Size:753K  samwin
swi069r10vs swd069r10vs.pdf pdf_icon

SWI069R10VS

SW069R10VS N-channel Enhanced mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 7.1m @VGS=10V 100% Avalanche Tested 1 1 2 2 3 3 Application Li Battery Protect Board,... See More ⇒

 ..2. Size:784K  samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf pdf_icon

SWI069R10VS

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V ... See More ⇒

 ..3. Size:708K  samwin
swha069r10vs swi069r10vs swd069r10vs swp069r10vs.pdf pdf_icon

SWI069R10VS

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET Features DFN5*6 TO-251 TO-252 TO-220 BVDSS 100V High ruggedness ID 70A Low RDS(ON) (Typ 7.1m )@VGS=10V RDS(ON) 7.1m @VGS=10V Low Gate Charge (Typ 45nC) Improved dv/dt Capability 9.0m @VGS=4.5V 1 100% Avalanche Tested G(4) 1 1 D(5,6,7,8) 2 2 2 3 3 3 A... See More ⇒

 7.1. Size:914K  samwin
swi069r06vt.pdf pdf_icon

SWI069R10VS

SW069R06VT N-channel Enhanced mode TO-251 MOSFET Features TO-251 BVDSS 60V High ruggedness ID 60A Low RDS(ON) (Typ 7.0m )@VGS=4.5V (Typ 6.0m )@VGS=10V RDS(ON) 7.0m @VGS=4.5V Low Gate Charge (Typ 83nC) Improved dv/dt Capability 6.0m @VGS=10V 1 100% Avalanche Tested 2 3 2 Application Electronic Ballast, Motor Control Inverter 1.Gate 2.Drain ... See More ⇒

Detailed specifications: NP90N055PDH , NP90N055PUH , NP90N055VDG , NP90N055VUG , NP90N055VUK , NP90N06VLG , NSVJ3557SA3 , NTHL082N65S3F , NCEP15T14 , SWD069R10VS , SWP069R10VS , IPP050N06NG , IPI05CNE8NG , IPP054NE8NG , IPI06CN10NG , IPI08CNE8NG , IPP08CNE8NG .

Keywords - SWI069R10VS MOSFET specs

 SWI069R10VS cross reference
 SWI069R10VS equivalent finder
 SWI069R10VS pdf lookup
 SWI069R10VS substitution
 SWI069R10VS replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


social 

LIST

Last Update

MOSFET: AP4688S | AP4606 | AP4580

 

 

 
Back to Top

 

Popular searches

d718 transistor | irfp250n datasheet | 2n5550 | 2sd1047 | 2n3035 | ksc1815 | bu406 | j201 datasheet

 


 
.