IPI06CN10NG Specs and Replacement
Type Designator: IPI06CN10NG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 1050 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO262
IPI06CN10NG substitution
IPI06CN10NG datasheet
ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf
IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 6.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target... See More ⇒
Detailed specifications: NSVJ3557SA3 , NTHL082N65S3F , SWI069R10VS , SWD069R10VS , SWP069R10VS , IPP050N06NG , IPI05CNE8NG , IPP054NE8NG , BS170 , IPI08CNE8NG , IPP08CNE8NG , IPD12CNE8NG , IPI12CNE8NG , IPP12CNE8NG , IPI45N04S4L-08 , IPP45N04S4L-08 , TP2301PR .
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