IPI06CN10NG Datasheet. Specs and Replacement

Type Designator: IPI06CN10NG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 1050 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO262

  📄📄 Copy 

IPI06CN10NG substitution

- MOSFET ⓘ Cross-Reference Search

 

IPI06CN10NG datasheet

 4.1. Size:519K  infineon
 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf pdf_icon

IPI06CN10NG

IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 6.2 m DS(on),max (TO263) Excellent gate charge x R product (FOM) DS(on) I 100 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target... See More ⇒

Detailed specifications: NSVJ3557SA3, NTHL082N65S3F, SWI069R10VS, SWD069R10VS, SWP069R10VS, IPP050N06NG, IPI05CNE8NG, IPP054NE8NG, BS170, IPI08CNE8NG, IPP08CNE8NG, IPD12CNE8NG, IPI12CNE8NG, IPP12CNE8NG, IPI45N04S4L-08, IPP45N04S4L-08, TP2301PR

Keywords - IPI06CN10NG MOSFET specs

 IPI06CN10NG cross reference

 IPI06CN10NG equivalent finder

 IPI06CN10NG pdf lookup

 IPI06CN10NG substitution

 IPI06CN10NG replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility