All MOSFET. IPI06CN10NG Datasheet

 

IPI06CN10NG MOSFET. Datasheet pdf. Equivalent

Type Designator: IPI06CN10NG

Marking Code: 06CN10N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 100 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 104 nC

Rise Time (tr): 27 nS

Drain-Source Capacitance (Cd): 1050 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: TO262

IPI06CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI06CN10NG Datasheet (PDF)

1.1. ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Size:519K _update-mosfet

IPI06CN10NG
IPI06CN10NG

IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 6.2 mΩ DS(on),max (TO263) • Excellent gate charge x R product (FOM) DS(on) I 100 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target

1.2. ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf Size:519K _infineon

IPI06CN10NG
IPI06CN10NG

IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS®2 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level R 6.2 mΩ DS(on),max (TO263) • Excellent gate charge x R product (FOM) DS(on) I 100 A D • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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