All MOSFET. IPI06CN10NG Datasheet

 

IPI06CN10NG MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPI06CN10NG
   Marking Code: 06CN10N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1050 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO262

 IPI06CN10NG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPI06CN10NG Datasheet (PDF)

 4.1. Size:519K  infineon
 ipb06cn10n-g ipi06cn10n-g ipp06cn10n-g.pdf

IPI06CN10NG IPI06CN10NG

IPB06CN10N G IPI06CN10N GIPP06CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 6.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NDT2N60P

 

 
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