TP4812NR Specs and Replacement
Type Designator: TP4812NR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: SOT23
TP4812NR substitution
- MOSFET ⓘ Cross-Reference Search
TP4812NR datasheet
tp4812nr.pdf
TP4812NR N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE IMPROVED SHOOT-THROUGH FOM BOTH NORMAL AND PB FREE PRODUCT ARE AVAILABLE NORMAL 80 95% SN, 5 20% PB PB FREE 99% SN ABOVE MECHANICAL DATA WE DECLARE THAT THE MATERIAL OF PRODUCT COMPLIANCE WITH ROHS REUIREMENTS. Pb Free TP4812NR... See More ⇒
Detailed specifications: IPI12CNE8NG, IPP12CNE8NG, IPI45N04S4L-08, IPP45N04S4L-08, TP2301PR, TP2302NR, TP2305PR, TP3443PR, IRF520, TP9435PR, 4N60CB, AON6786, AON6790, AP9918H, AP9918J, CEB7030L, CEP7030L
Keywords - TP4812NR MOSFET specs
TP4812NR cross reference
TP4812NR equivalent finder
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TP4812NR substitution
TP4812NR replacement
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History: HM10N10KA
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