AON6790 MOSFET Datasheet: N-Ch, 30V, 68A. Full specification with pinout and replacement list

AON6790 Specs and Replacement

Type Designator: AON6790

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: DFN5X6

AON6790 substitution

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AON6790 datasheet

..1. Size:262K 1
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AON6790 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ... See More ⇒

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AON6792 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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AON6794 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:345K aosemi
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AON6796 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: TP2301PR, TP2302NR, TP2305PR, TP3443PR, TP4812NR, TP9435PR, 4N60CB, AON6786, 2N60, AP9918H, AP9918J, CEB7030L, CEP7030L, CSD30N55, DMT10N60, DMF10N60, DMK10N60