All MOSFET. AON6790 Datasheet

 

AON6790 Datasheet and Replacement


   Type Designator: AON6790
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: DFN5X6
 

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AON6790 Datasheet (PDF)

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AON6790

AON679030V N-Channel MOSFETTMSRFET General Description Product SummaryVDS30VSRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V)with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is

 8.1. Size:331K  aosemi
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AON6790

AON679230V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:243K  aosemi
 aon6794.pdf pdf_icon

AON6790

AON679430V N-Channel SRFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:345K  aosemi
 aon6796.pdf pdf_icon

AON6790

AON679630V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: TP2301PR , TP2302NR , TP2305PR , TP3443PR , TP4812NR , TP9435PR , 4N60CB , AON6786 , IRF830 , AP9918H , AP9918J , CEB7030L , CEP7030L , CSD30N55 , DMT10N60 , DMF10N60 , DMK10N60 .

History: NP90N04VDG | KSK596 | HPW080NE5SPA

Keywords - AON6790 MOSFET datasheet

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