LD1014D PDF and Equivalents Search

 

LD1014D Specs and Replacement

Type Designator: LD1014D

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.6 nS

Cossⓘ - Output Capacitance: 467 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-252

LD1014D substitution

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LD1014D datasheet

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LD1014D

PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description Superior gate charge x Rdson product (FOM) The Power JFET transistor from Lovoltech is a device that Trench Power JFET with low threshold voltage Vth. presents a Low Rdson allowing for improved efficiencies in DC- Device fully ON with Vgs = 0.7V DC switching applications. The device is... See More ⇒

 9.1. Size:318K  sisemi
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LD1014D

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification NPN D /D SERIES TRANSISTORS BLD101D NPN D /D SERIES TRANSISTORS BLD101D NPN D /D SE... See More ⇒

Detailed specifications: DMK10N60, DMG10N60, H06N60U, JCS4N60VB, JCS4N60RB, JCS4N60BB, JCS4N60CB, JCS4N60FB, K2611, ME80N75F, ME80N75FG, MMF60R280QTH, NCE3401AY, NDF08N60ZG, NDP08N60ZG, PTF10149, RJK0234DNS

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