All MOSFET. LD1014D Datasheet

 

LD1014D Datasheet and Replacement


   Type Designator: LD1014D
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 467 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-252
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LD1014D Datasheet (PDF)

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LD1014D

PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description Superior gate charge x Rdson product (FOM) The Power JFET transistor from Lovoltech is a device that Trench Power JFET with low threshold voltage Vth. presents a Low Rdson allowing for improved efficiencies in DC- Device fully ON with Vgs = 0.7V DC switching applications. The device is

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LD1014D

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D /D SERIES TRANSISTORS BLD101DNPN D /D SERIES TRANSISTORS BLD101DNPN D /D SE

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History: FDB3682 | IRLR024 | AON6794 | MC08N005C | QM3018D | CED05N8 | BL10N70-A

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