All MOSFET. LD1014D Datasheet

 

LD1014D MOSFET. Datasheet pdf. Equivalent


   Type Designator: LD1014D
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.4 nC
   trⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 467 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-252

 LD1014D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

LD1014D Datasheet (PDF)

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 ld1014d.pdf

LD1014D LD1014D

PWRLITE LD1014D High Performance N-Channel POWERJFETTM with PN Diode Features Description Superior gate charge x Rdson product (FOM) The Power JFET transistor from Lovoltech is a device that Trench Power JFET with low threshold voltage Vth. presents a Low Rdson allowing for improved efficiencies in DC- Device fully ON with Vgs = 0.7V DC switching applications. The device is

 9.1. Size:318K  sisemi
 bld101d.pdf

LD1014D LD1014D

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationNPN D /D SERIES TRANSISTORS BLD101DNPN D /D SERIES TRANSISTORS BLD101DNPN D /D SE

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History: HM5853 | NTMFS6B05NT3G | NCE60ND08S | BUK555-100A | 2SK1035 | NCE60N390

 

 
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