NDP08N60ZG PDF and Equivalents Search

 

NDP08N60ZG Specs and Replacement

Type Designator: NDP08N60ZG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 129 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO-220AB

NDP08N60ZG substitution

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NDP08N60ZG datasheet

 ..1. Size:137K  1
 ndf08n60zg ndp08n60zg.pdf pdf_icon

NDP08N60ZG

DataSheet.in NDF08N60Z, NDP08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (MAX) @ 3.5 A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 600 V 0.95 W Rating Symbol NDF08N60Z NDP08N60Z Unit Drain-to-Source Voltage... See More ⇒

 8.1. Size:140K  onsemi
 ndf08n50z ndp08n50z.pdf pdf_icon

NDP08N60ZG

NDF08N50Z, NDP08N50Z N-Channel Power MOSFET 500 V, 0.69 W Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (TYP) @ 3.6 A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 500 V 0.69 W Rating Symbol NDF08N50Z NDP08N50Z Unit Drain-to-Source Voltage VDSS 500 V N... See More ⇒

Detailed specifications: JCS4N60CB, JCS4N60FB, LD1014D, ME80N75F, ME80N75FG, MMF60R280QTH, NCE3401AY, NDF08N60ZG, 60N06, PTF10149, RJK0234DNS, SPP100N06S2-05, SPB100N06S2-05, SSM5N03FE, STK0260D, SWD5N65K, VN10KLS

Keywords - NDP08N60ZG MOSFET specs

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