All MOSFET. NDP08N60ZG Datasheet

 

NDP08N60ZG Datasheet and Replacement


   Type Designator: NDP08N60ZG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO-220AB
 

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NDP08N60ZG Datasheet (PDF)

 ..1. Size:137K  1
 ndf08n60zg ndp08n60zg.pdf pdf_icon

NDP08N60ZG

DataSheet.inNDF08N60Z, NDP08N60ZN-Channel Power MOSFET600 V, 0.95 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (MAX) @ 3.5 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)600 V0.95 WRating Symbol NDF08N60Z NDP08N60Z UnitDrain-to-Source Voltage

 8.1. Size:140K  onsemi
 ndf08n50z ndp08n50z.pdf pdf_icon

NDP08N60ZG

NDF08N50Z, NDP08N50ZN-Channel Power MOSFET500 V, 0.69 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (TYP) @ 3.6 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)500 V0.69 WRating Symbol NDF08N50Z NDP08N50Z UnitDrain-to-Source Voltage VDSS 500 VN

Datasheet: JCS4N60CB , JCS4N60FB , LD1014D , ME80N75F , ME80N75FG , MMF60R280QTH , NCE3401AY , NDF08N60ZG , AO4468 , PTF10149 , RJK0234DNS , SPP100N06S2-05 , SPB100N06S2-05 , SSM5N03FE , STK0260D , SWD5N65K , VN10KLS .

History: UT4232 | STB8N65M5 | IRF7501 | IRLML2246 | IRLML0040TRPBF | SML3520BN

Keywords - NDP08N60ZG MOSFET datasheet

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