All MOSFET. PTF10149 Datasheet

 

PTF10149 Datasheet and Replacement


   Type Designator: PTF10149
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 197 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 200 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: 20252
 

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PTF10149 Datasheet (PDF)

 ..1. Size:215K  1
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PTF10149

PTF 1014970 Watts, 921960 MHzGOLDMOS Field Effect TransistorDescription INTERNALLY MATCHEDThe PTF 10149 is an internally matched 70watt GOLDMOS FETintended for cellular and GSM amplifier applications from 921 to Performance at 960 MHz, 26 Volts960 MHz. It operates with 50% efficiency and 16 dB typical gain.- Output Power = 70 WattsNitride surface passivation and

 9.1. Size:3628K  cn puolop
ptf10hn08 pty10hn08.pdf pdf_icon

PTF10149

PTF10HN08/PTY10HN0880V/100A N-Chnnel MOSFETFeaturesD 80V/100ARDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive LossS High avalanche CurrentD% 100 Avalanche TestedApplicationG SG D S Power SupplyTO-220F TO-263 DC-DC Converters UPS Battery Manageme eAbsolute Maximum Ratings

 9.2. Size:6851K  cn puolop
ptf10n65.pdf pdf_icon

PTF10149

PTF1 0N6565 0V/1 0A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 0.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSC032N03SG

Keywords - PTF10149 MOSFET datasheet

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