PTF10149 Specs and Replacement
Type Designator: PTF10149
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 197 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 200 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: 20252
PTF10149 substitution
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PTF10149 datasheet
ptf10149.pdf
PTF 10149 70 Watts, 921 960 MHz GOLDMOS Field Effect Transistor Description INTERNALLY MATCHED The PTF 10149 is an internally matched 70 watt GOLDMOS FET intended for cellular and GSM amplifier applications from 921 to Performance at 960 MHz, 26 Volts 960 MHz. It operates with 50% efficiency and 16 dB typical gain. - Output Power = 70 Watts Nitride surface passivation and ... See More ⇒
ptf10hn08 pty10hn08.pdf
PTF10HN08/PTY10HN08 80V/100A N-Chnnel MOSFET Features D 80V/100A RDS(ON)=6.5m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss S High avalanche Current D % 100 Avalanche Tested Application G S G D S Power Supply TO-220F TO-263 DC-DC Converters UPS Battery Manageme e Absolute Maximum Ratings... See More ⇒
ptf10n65.pdf
PTF1 0N65 65 0V/1 0A N-Channel A dv anced Power MOSFET Features RDS(on) (Typical 0.6 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150 C) G D S TO-220F Absolute Maximum Ratings Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above... See More ⇒
Detailed specifications: JCS4N60FB , LD1014D , ME80N75F , ME80N75FG , MMF60R280QTH , NCE3401AY , NDF08N60ZG , NDP08N60ZG , IRFP064N , RJK0234DNS , SPP100N06S2-05 , SPB100N06S2-05 , SSM5N03FE , STK0260D , SWD5N65K , VN10KLS , BFW10 .
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