All MOSFET. STK0260D Datasheet

 

STK0260D Datasheet and Replacement


   Type Designator: STK0260D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
   Package: DPAK
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STK0260D Datasheet (PDF)

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STK0260D

www.DataSheet4U.com STK0260DSemiconductor Semiconductor Advanced Power MOSFETSWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=600V(Min.) Low Crss : Crss=6.0pF(Typ.) Low gate charge : Qg=8.4nC(Typ.) Low RDS(on) :RDS(on)=4.0(Max.) Ordering Information Type NO. Marking Package Code STK0260D STK0260 D-PAKOutline Dimensions unit : mm

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: GSM3030 | IRF6612

Keywords - STK0260D MOSFET datasheet

 STK0260D cross reference
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