SI9953DY Datasheet. Specs and Replacement

Type Designator: SI9953DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SO-8

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SI9953DY datasheet

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SI9953DY

Si9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.25 @ VGS = 10 V "2.3 20 20 0.40 @ VGS = 4.5 V "1.5 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain... See More ⇒

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Detailed specifications: JCS12N65T, JCS12N65CT, JCS12N65FT, ME4410A, MMD65R600QRH, MT3245, NCE0117K, NTMFS4C55N, 10N60, STP110N7F6, SUP85N03-07P, SUB85N03-07P, SVF4N60CAF, SVF4N60CAK, SVF4N60CAD, SVF4N60CAT, SVF4N60CAMN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.