SI9953DY Specs and Replacement
Type Designator: SI9953DY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SO-8
SI9953DY substitution
SI9953DY datasheet
si9953dy.pdf
Si9953DY Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.25 @ VGS = 10 V "2.3 20 20 0.40 @ VGS = 4.5 V "1.5 S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top View D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain... See More ⇒
Detailed specifications: JCS12N65T , JCS12N65CT , JCS12N65FT , ME4410A , MMD65R600QRH , MT3245 , NCE0117K , NTMFS4C55N , AON6414A , STP110N7F6 , SUP85N03-07P , SUB85N03-07P , SVF4N60CAF , SVF4N60CAK , SVF4N60CAD , SVF4N60CAT , SVF4N60CAMN .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
