SI9953DY Datasheet and Replacement
Type Designator: SI9953DY
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SO-8
SI9953DY substitution
SI9953DY Datasheet (PDF)
si9953dy.pdf
Si9953DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.25 @ VGS = 10 V "2.320200.40 @ VGS = 4.5 V "1.5S1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top ViewD1 D1 D2 D2P-Channel MOSFET P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain
Datasheet: JCS12N65T , JCS12N65CT , JCS12N65FT , ME4410A , MMD65R600QRH , MT3245 , NCE0117K , NTMFS4C55N , IRFB4110 , STP110N7F6 , SUP85N03-07P , SUB85N03-07P , SVF4N60CAF , SVF4N60CAK , SVF4N60CAD , SVF4N60CAT , SVF4N60CAMN .
History: SQA401EJ | IRFP4004 | SI2300BDS-T1-GE3 | MTP20N20E | FDPC8011S | IRF6894MPBF | HY3410B
Keywords - SI9953DY MOSFET datasheet
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History: SQA401EJ | IRFP4004 | SI2300BDS-T1-GE3 | MTP20N20E | FDPC8011S | IRF6894MPBF | HY3410B
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