STP110N7F6
MOSFET. Datasheet pdf. Equivalent
Type Designator: STP110N7F6
Marking Code: 110N7F6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 176
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 110
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 100
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 340
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
TO-220
STP110N7F6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STP110N7F6
Datasheet (PDF)
..1. Size:626K 1
stp110n7f6.pdf 
STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schem
..2. Size:645K st
stp110n7f6.pdf
STP110N7F6N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTTABSTP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schem
7.1. Size:681K st
stp110n8f7.pdf
STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit
7.2. Size:551K st
stp110n8f6.pdf
STP110N8F6N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max ID PTOTTABSTP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 321 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power lossApplicationsFigure 1. Internal schemat
7.3. Size:647K st
stp110n55f6.pdf
STP110N55F6N-channel 55 V, 4.5 typ., 110 A STripFET F6 Power MOSFET in a TO-220 packageDatasheet - production dataFeatures Order code VDS RDS(on) max. IDTABSTP110N55F6 55 V 5.2 m 110 A Low gate charge Very low on-resistance321 High avalanche ruggednessTO-220Applications Switching applicationsDescriptionFigure 1. Internal schematic diagr
7.4. Size:1225K st
stf110n10f7 stp110n10f7.pdf
STF110N10F7, STP110N10F7N-channel 100 V, 5.1 m typ., 110 A, STripFET VII DeepGATE Power MOSFETs in TO-220FP and TO-220 packagesDatasheet - production dataFeatures Order codes VDS RDS(on) max ID PTOTSTF110N10F7 45 A 30 WTAB100 V 0.007 STP110N10F7 110 A 150 W Ultra low on-resistance3 32 21 1 100% avalanche testedTO-220FP TO-220Applications Sw
7.5. Size:227K inchange semiconductor
stp110n8f6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP110N8F6FEATURESVery low on-resistanceVery low gate chargeHigh avalanche ruggednessLow gate drive power loss100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
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