STP110N7F6 MOSFET Datasheet: N-Ch, 68V, 110A. Full specification with pinout and replacement list

STP110N7F6 Specs and Replacement

Type Designator: STP110N7F6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 340 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220

STP110N7F6 substitution

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STP110N7F6 datasheet

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STP110N7F6 N-channel 68 V, 0.0055 typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT TAB STP110N7F6 68 V 0.0065 110 A 176 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schem... See More ⇒

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STP110N8F7 N-channel 80 V, 6.4 m typ., 80 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT STP110N8F7 80 V 7.5 m 80 A 170 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Swit... See More ⇒

7.2. Size:551K st
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STP110N8F6 N-channel 80 V, 0.0056 typ.,110 A, STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS(on)max ID PTOT TAB STP110N8F6 80 V 0.0065 110 A 200 W Very low on-resistance 3 2 1 Very low gate charge TO-220 High avalanche ruggedness Low gate drive power loss Applications Figure 1. Internal schemat... See More ⇒